Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts
Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts
复制标题
缺陷密度对n型GaN肖特基接触电特性的影响
DOI：
10.1116/1.590866
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发表时间：
1999
影响因子：
1.4
通讯作者：
R. Dupuis
中科院分区：
文献类型：
--
作者：
K. Shiojima;J. Woodall;C. J. Eiting;P. Grudowski;R. Dupuis
研究了n型GaN外延层中的缺陷对Ni接触电学特性的影响。用电流-电压（I-V）和电容-电压（C-V）测量方法研究了沉积在四个不同迁移率的n-GaN晶片上的Ni点的特性。沉积在未掺杂GaN上的Ni接触具有6.7 cm 2/V s的迁移率，表现出欧姆行为，接触电阻率为0.1 Ω cm 2。 相比之下，沉积在Si掺杂GaN上的Ni接触具有超过100 cm 2/V s的迁移率，表现出肖特基行为，从I-V和从C-V的肖特基势垒高度分别为0.75 eV和1.10 eV。 这些结果表明，由于缺陷和位错在界面处形成具有低势垒高度的小区域。
The effect of defects in n-type GaN epitaxial layers on the electrical characteristics of Ni contacts was studied. The defect density of GaN layers was characterized, and Ni dots deposited on four n-GaN wafers with different mobilities were examined by current–voltage (I–V) and capacitance–voltage (C–V) measurements. Ni contacts deposited on undoped GaN with a mobility of 6.7 cm2/V s showed ohmic behavior with a specific contact resistance on the order of 0.1 Ω cm2. In contrast, Ni contacts deposited on Si-doped GaN with a mobility of over 100 cm2/V s exhibited Schottky behavior with a Schottky barrier height of 0.75 eV from I–V and 1.10 eV from C–V. These results suggest the formation of small areas with low barrier height at the interface due to defects and dislocations.
影响因子：
4
作者：
NAKAMURA, S;MUKAI, T;SENOH, M
通讯作者：
SENOH, M