One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering
One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering
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高压磁控溅射一步外延制备高迁移率La掺杂BaSnO3薄膜
DOI：
10.1063/5.0046639
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发表时间：
2021-05
期刊：
影响因子：
6.1
通讯作者：
Yanwei Cao
中科院分区：
文献类型：
--
作者：
Ruyi Zhang;Xinyan Li;Jiachang Bi;Shunda Zhang;Shaoqin Peng;Yang Song;Qinghua Zhang;Lin Gu;Junxi Duan;Yanwei Cao
作为唯一的钙钛矿型透明氧化物半导体材料，采用分子束外延和脉冲激光沉积的方法成功地制备了高迁移率的掺La BaSnO_3薄膜。然而，对于磁控溅射这一广泛应用于大规模制造的技术来说，制备高迁移率的La掺杂BaSnO_3薄膜仍然是一个巨大的挑战。本工作采用高压磁控溅射的方法，在钛酸锶单晶衬底上直接合成了高迁移率的La掺杂BaSnO_3薄膜(载流子密度为−4.0x1020cmBaSnO_3，室温下迁移率可达121cm2·V·−_2·∼_1和−_3)。用高分辨x射线衍射仪、x射线光电子能谱和随温度变化的电输运测量对La掺杂BaSnO_3薄膜的结构和电学性质进行了表征。本工作获得的La掺杂BaSnO_3薄膜的室温电子迁移率比用磁控溅射法生长的薄膜的室温电子迁移率高两到四倍。此外，在高载流子密度范围内(n>；3×1020cmBaSnO_3)，我们所获得的电子迁移率为121cm2·V·−_2·−_1和S·−_3，在所有已报道的掺杂BaSnO_3薄膜中都是最高的。结果表明，溅射过程中较高的Ar气压对稳定薄膜的完全弛豫态和诱导氧空位起着至关重要的作用，从而有利于室温下的高迁移率。我们的工作提供了一种简单而经济的方法来大规模合成用于透明电子的高迁移率透明导电膜。
As unique perovskite transparent oxide semiconductors, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. In this work, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (with mobility up to 121 cm2 V−1 s−1 at the carrier density of ∼4.0 × 1020 cm−3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of La-doped BaSnO3 films were characterized by combined high-resolution x-ray diffraction, x-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room-temperature electron mobility of La-doped BaSnO3 films achieved in this work is two to four times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 × 1020 cm−3), the electron mobility value of 121 cm2 V−1 s−1 achieved in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which facilitates high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.
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DOI：
10.7498/aps.64.207303
发表时间：
2015
期刊：
物理学
影响因子：
--
作者：
罗炳成
通讯作者：
罗炳成
影响因子：
11.7
作者：
He H;Yang Z;Xu Y;Smith AT;Yang G;Sun L
通讯作者：
Sun L
缺氧导致掺镧透明钙钛矿氧化物 BaSnO3 中强电子局域化
影响因子：
3.7
作者：
Cui Jiameng;Zhang Yingying;Wang Jianlin;Zhibo Zhao;Haoliang Huang;Wei Zou;Mengmeng Yang;Ranran Peng;Wensheng Yan;Qiuping Huang;Zhengping Fu;Yalin Lu
通讯作者：
Yalin Lu
影响因子：
4
作者：
R. Wei;Xianwu Tang;Z. Hui;X. Luo;J. Dai;Junliang Yang;W. Song;L. Chen;Xiaoguang Zhu;
通讯作者：
R. Wei;Xianwu Tang;Z. Hui;X. Luo;J. Dai;Junliang Yang;W. Song;L. Chen;Xiaoguang Zhu;
影响因子：
6.4
作者：
S. Heo;Daseob Yoon;S. Yu;Junwoo Son;H. Jang
通讯作者：
S. Heo;Daseob Yoon;S. Yu;Junwoo Son;H. Jang