Tunnel conductance via interfacial states in semimetal/semiconductor/semimetal junctions
Tunnel conductance via interfacial states in semimetal/semiconductor/semimetal junctions
复制标题
半金属/半导体/半金属结中界面状态的隧道电导
DOI：
10.1103/physrevb.74.155329
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发表时间：
2006
影响因子：
3.7
通讯作者：
J. Inoue
中科院分区：
文献类型：
--
作者：
S. Honda;T. Kondo;H. Itoh;J. Inoue
使用全轨道紧密结合模型计算了GdAs和GaAs分别为半金属和半导体的$\ mathm {Gd}\ mathm {As}∕\ mathm {Ga}\ mathm {As}∕\ mathm {Gd}\ mathm {As}$结的界面态密度和电导。在假设电子有相干隧穿的情况下，利用Kubo公式计算了零温度下结的隧穿电导。强调界面状态对电导的作用，得到了以下结果。界面态从界面延伸2-4个原子层；然而，界面态对电导率的影响扩展到近10个原子层，并且在薄的GaAs层中，隧道电导率与势垒厚度呈非单调关系。界面态密度的高度不一定与隧道电导的大小相关。引线的费米表面与界面态之间的匹配决定了隧道电导的大小。隧道电导的非单调依赖性是由于GaAs层两个界面处存在的界面态的干涉效应引起的。
The interfacial density of states and conductance of $\mathrm{Gd}\mathrm{As}∕\mathrm{Ga}\mathrm{As}∕\mathrm{Gd}\mathrm{As}$ junctions, where GdAs and GaAs are a semimetal and a semiconductor, respectively, are calculated using a full-orbital tight-binding model. The tunnel conductance of the junction is calculated using the Kubo formula at zero temperature assuming coherent tunneling of electrons. Emphasizing the role of interfacial states on the conductance, the following results are obtained. The interfacial states extend 2-4 atomic layers from the interface; however, the effect of the interfacial states on the conductance extends up to nearly 10 atomic GaAs layers, and nonmonotonic dependence of the tunnel conductance on the barrier thickness appears for thin GaAs layers. The height of the interfacial density of states does not necessarily correlate with the magnitude of the tunnel conductance. The matching between the Fermi surface of the leads and interfacial states governs the magnitude of the tunnel conductance. It is also found that the nonmonotonic dependence of the tunnel conductance is caused by an interference effect of the interface states existing at the two interfaces of GaAs layer.
影响因子：
8.6
作者：
Tanaka, M;Higo, Y
通讯作者：
Higo, Y
DOI：
10.1143/jjap.42.l419
发表时间：
2003-04-15
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
影响因子：
--
作者：
Inomata, K;Okamura, S;Tezuka, N
通讯作者：
Tezuka, N