SOL-GEL PREPARATION AND CHARACTERIZATION OF MULTIFERROIC BiFeO3 THIN FILMS WITH VARIOUS BI/FE RATIO
SOL-GEL PREPARATION AND CHARACTERIZATION OF MULTIFERROIC BiFeO3 THIN FILMS WITH VARIOUS BI/FE RATIO
复制标题
不同 BI/FE 比的多铁性 BiFeO3 薄膜的溶胶-凝胶制备及表征
DOI：
10.1080/10584580701759411
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发表时间：
2007
影响因子：
0.7
通讯作者：
M. Okuyama
中科院分区：
文献类型：
--
作者：
Yoshitaka Nakamura;K. Yun;S. Nakashima;M. Okuyama
采用溶胶-凝胶法在Pt/TiO 2/SiO2/Si衬底上制备了BiFeO 3薄膜。θ < eqid2 >2θ扫描XRD图谱表明，薄膜主要由多晶钙钛矿组成，Bi：Fe = 1.1：1.0的薄膜结晶度较好。扫描电镜和原子力显微镜观察表明，BiFeO 3薄膜均为玫瑰花状结构，由钙钛矿相和基体相组成。当电场达到1.6 MV/cm时，在80 K的温度下测量的漏电流密度在所有膜中低于10 - 4 A/cm 2。BiFeO 3薄膜在80 K时的漏电机制主要为肖特基导电。在80 K时，当Bi：Fe = 1.1：1.0、1.0：1.0和1.0：1.1时，在最大外加电压为2.8 MV/cm时的反射极化分别为100、49和44 μC/cm 2。当Bi：Fe = 1.1：1.0，1.0：1.0和1.0：1.1时，BiFeO 3薄膜在80 K时的饱和磁化强度分别为14，22.5，15 emu/cm 3。在这些比例中，Bi：Fe = 1的前驱体沉积的BiFeO 3薄膜。1：1.0的铁电性能最好。
ABSTRACT BiFeO3 thin films have been prepared on Pt/TiO2/SiO2/Si substrates by sol-gel method using precursor solutions of various elemental ratio (Bi:Fe = 1.1:1.0, 1.0:1.0, and 1.0:1.1). The θ < eqid2 > 2θ scan XRD patterns show all the films consist mainly of polycrystalline perovskite and the crystallinity of Bi:Fe = 1.1:1.0 is better than the others. SEM and AFM images show all BiFeO3 film have rosette structures, which consist of perovskite phase and matrix phase. The leakage current density measured at the temperature of 80 K is lower than 10−4 A/cm2 in all the films when the electric field reaches 1.6 MV/cm. The leakage mechanism of BiFeO3 thin film is dominated by Schottky conduction at 80 K. At 80 K, the remanent polarizations at maximum applied voltage of 2.8 MV/cm are 100, 49, and 44 μC/cm2 for the ratio of Bi:Fe = 1.1:1.0, 1.0:1.0, and 1.0:1.1, respectively. The saturated magnetization of BiFeO3 thin films at 80 K were found to be 14, 22.5, 15 emu/cm3 for the ratio of Bi:Fe = 1.1:1.0, 1.0:1.0, and 1.0:1.1, respectively. Among these ratio, BiFeO3 thin film deposited from precursor of Bi:Fe = 1. 1:1.0 gives the best ferroelectric property.
影响因子：
4
作者：
K. Yun;D. Ricinschi;T. Kanashima;M. Okuyama
通讯作者：
K. Yun;D. Ricinschi;T. Kanashima;M. Okuyama