Perpendicular magnetization behaviors of Co/FeMn/Co multilayers with and without Pt spacer
Perpendicular magnetization behaviors of Co/FeMn/Co multilayers with and without Pt spacer
复制标题
有和没有 Pt 间隔物的 Co/FeMn/Co 多层的垂直磁化行为
DOI：
10.1063/1.3289716
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发表时间：
2010-01
影响因子：
3.2
通讯作者：
Yu, G. H.
中科院分区：
文献类型：
--
作者：
Liu, Y.;Fu, Y. Q.;Liu, S.;Jin, C.;Li, M. H.;Yu, G. H.
研究了磁控溅射Co/FeMn/Co多层膜中界面效应对磁化强度的影响。磁化强度随Co层厚度的变化强烈地依赖于Co层和FeMn层的磁极限处的界面自旋的取向和旋转，这由铁磁/反铁磁界面处的磁各向异性决定。在Fe Mn/Co界面处插入Pt间隔层后，垂直磁化强度降低，而在Fe Mn/Co界面处插入Pt间隔层后，垂直磁化强度几乎没有变化。虽然在沉积过程中施加了垂直的诱导场，但除非插入0.4nm的Pt间隔层，否则在Co/FeMn界面处不会诱导出垂直的交换偏置，这表明界面未补偿的自旋很难被钉扎。
The interfacial effect on the magnetization in the magnetron sputtered Co/FeMn/Co multilayers with Pt spacer layer upon and beneath the FeMn layer, respectively, was investigated. The variation in the magnetization with the thickness of the Co layer strongly depends on the orientation and the rotation of the interfacial spins at the ultrathin limit of the Co layer as well as the FeMn layer, which is determined by the magnetic anisotropy at the ferromagnetic/antiferromagnetic interface. The perpendicular magnetization is considerably enhanced by the FeMn layer either with or without the Pt spacer, and the enhancement is cut down by inserting the Pt spacer at the Co/FeMn interface, whereas nearly not changed by the Pt spacer at the FeMn/Co interface. Although a perpendicular inducing field is applied during the deposition, the perpendicular exchange bias is not induced at the Co/FeMn interface unless a 0.4 nm Pt spacer is inserted, indicating that the interfacial uncompensated spins could hardly be pinned i...
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