Charge-Compensated (V, Ru) Co-Substitution in Higher Manganese Silicide Single Crystals for Enhanced Thermoelectric and Mechanical Performance
Charge-Compensated (V, Ru) Co-Substitution in Higher Manganese Silicide Single Crystals for Enhanced Thermoelectric and Mechanical Performance
复制标题
高硅化锰单晶中的电荷补偿 (V, Ru) 共取代可增强热电和机械性能
DOI:
10.1021/acsaem.2c03803
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发表时间:
2023
影响因子:
6.4
通讯作者:
Miyazaki Yuzuru
中科院分区:
文献类型:
--
作者:
Chauhan Nagendra Singh;Ono Ichiro;Hayashi Kei;Miyazaki Yuzuru
Higher manganese silicides (HMSs) represented as MnSiγare generically Nowotny chimney–ladder (NCL) compounds that obey the 14-electron rule due to which their stability and electrical properties are intimately related to the valence electron count (VEC) per number of transition metal atoms. However, owing to the incommensurate composite crystal structure of HMS, most doping/substitution approaches aimed at carrier concentration optimization had remained skewed, leading to limited control over its VEC. In this study, we propose the compensated co-substitution approach for the optimization of thermoelectric properties in NCL phases and demonstrate its efficacy by the co-substitution of the [Mn] subsystem with aliovalent V (p-type) and Ru (n-type) dopants in partially substituted (Mn1–x–yVxRuy)Siγsingle crystals melt grown by the Bridgman method. The modulation vector component (γ) was accurately determined by the Le Bail analysis of the diffraction pattern using a (3 + 1) dimensional superspace approach and is correlated with the electrical transport and VEC of the synthesized samples. A remarkable enhancement in thermoelectric and mechanical performance was attained for the HMS single crystals upon (V, Ru)co-substitution in the direction perpendicular to thec-axis, i.e., along the cleavage plane. The charge compensation and synergistic reduction in lattice thermal conductivity thus result in a peak thermoelectric figure of merit (zT) of ∼0.6 (±0.1) at 823 K, which corresponds to ∼250% enhancement when compared to the pristine HMS single crystal.
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影响因子:
3.2
作者:
T. Dasgupta;J. Etourneau;B. Chevalier;S. Matar;A. Umarji
通讯作者:
T. Dasgupta;J. Etourneau;B. Chevalier;S. Matar;A. Umarji
影响因子:
1.5
作者:
Y. Miyazaki
通讯作者:
Y. Miyazaki
影响因子:
9.5
作者:
Quansheng Guo;Wenhao Zhang;Zihang Liu;Xiuwei Fu;S. Le Tonquesse;N. Sato;Hyoung;K. Shimamura;D. Berthebaud;T. Mori
通讯作者:
T. Mori
DOI:
--
发表时间:
2022
期刊:
影响因子:
--
作者:
N. S. Chauhan;I. Ono;K. Hayashi;and Y. Miyazaki
通讯作者:
and Y. Miyazaki
影响因子:
8.6
作者:
S. Le Tonquesse;L. Joanny;Quansheng Guo;E. Elkaim;V. Demange;D. Berthebaud;T. Mori;M. Pasturel;C. Prestipino
通讯作者:
C. Prestipino