Etching characteristics of PECVD-prepared SiN films with CF4/D2 and CF4/H2 plasmas at different temperatures
Etching characteristics of PECVD-prepared SiN films with CF4/D2 and CF4/H2 plasmas at different temperatures
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CF4/D2和CF4/H2等离子体PECVD制备的SiN薄膜在不同温度下的刻蚀特性
DOI：
10.1109/issm51728.2020.9377537
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
M. Hori
中科院分区：
文献类型：
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作者：
S. Hsiao;Thi‐Thuy‐Nga Nguyen;T. Tsutsumi;K. Ishikawa;M. Sekine;M. Hori
研究了不同衬底温度下等离子体（CF<inf>4</inf>/<inf>D2</inf>和CF<inf>4</inf>/<inf>H2</inf>）对PECVD SiN薄膜刻蚀速率的影响。在室温及更高温度下，CF<inf>4</inf>/D2等离子体的刻蚀速率高于CF<inf>4</inf>/<inf>D2</inf><inf></inf>发射光谱表明，与CF<inf>4</inf>/H2等离子体相比，CF<inf>4</inf>/<inf>D2</inf><inf></inf>经CF<inf>4</inf>/<inf>H2</inf>等离子体处理后的样品具有较薄的碳氟厚度和较低的F/C比。CF<inf>4</inf>/<inf>D2</inf>等离子体刻蚀速率的增加与碳氟厚度和气相浓度无关。通过氘和氢的解离作用，对SiN膜内部的氢进行提取，这对于富硅氢键SiN膜的刻蚀是非常重要的。
The dependences of plasmas (CF<inf>4</inf>/D<inf>2</inf> and CF<inf>4</inf>/H<inf>2</inf>) on etch rates of the PECVD SiN films at different substrate temperatures were investigated. The CF<inf>4</inf>/D<inf>2</inf> plasma exhibited higher etch rates than that for the CF<inf>4</inf>/D<inf>2</inf> plasma at room temperature and higher. The optical emission spectra showed that the CF polymerization, F and Balmer emissions were stronger in the CF<inf>4</inf>/D<inf>2</inf> plasma, by comparing with the CF<inf>4</inf>/H<inf>2</inf> plasma. A thinner fluorocarbon thickness with a lower F/C ratio was found in the sample proceeded by the CF<inf>4</inf>/H<inf>2</inf> plasma. The fluorocarbon thickness and gas phase concentration were not responsible for the increase of etch rate in the CF<inf>4</inf>/D<inf>2</inf> plasma. The abstraction of H inside the SiN films by deuterium and hydrogen dissociation were considered to be important for the etching of the Si- H bond rich SiN films.
氢、氘微波等离子体对化学气相沉积同质外延金刚石生长的同位素效应
DOI：
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发表时间：
2007
期刊：
Journal of Applied Physics (印刷中)
影响因子：
--
作者：
N.Mizuochi;et al.
通讯作者：
et al.