Compliant energy and momentum conservation in NEGF simulation of electron-phonon scattering in semiconductor nano-wire transistors
Compliant energy and momentum conservation in NEGF simulation of electron-phonon scattering in semiconductor nano-wire transistors
复制标题
半导体纳米线晶体管中电子声子散射的 NEGF 模拟中符合能量和动量守恒
DOI：
10.1088/1742-6596/367/1/012012
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Barker J
中科院分区：
文献类型：
--
作者：
Barker J
空间不均匀硅纳米线场效应晶体管的建模受益于围绕非平衡格林函数 (NEGF) 理论 Keldysh 公式构建的强大仿真工具。对于自能在空间坐标中为对角线（局部）的情况，该方法非常有效。因此，采用对角线（局部性）近似已成为常见的做法。我们在这里证明，控制电子-声子相互作用的自能的散射核通常在至少几个晶格间距的尺度上是非局域的（因此在极端纳米晶体管的特征的空间尺度内），并且对于极性光学声子-电子相互作用可能要长得多。结果表明，对角近似严重低估了极性光学声子散射的散射率。这是硅器件中的一个意想不到的问题，但由于强极性 SO 声子-电子相互作用延伸到环绕栅极器件中被高 kappa 电介质包围的狭窄硅沟道而发生。由于耗散非弹性散射对于高度受限的设备来说已经是一个严重的问题，因此得出的结论是需要新的算法来提供适当且有效的 NEGF 工具。
The modelling of spatially inhomogeneous silicon nanowire field-effect transistors has benefited from powerful simulation tools built around the Keldysh formulation of non-equilibrium Green function (NEGF) theory. The methodology is highly efficient for situations where the self-energies are diagonal (local) in space coordinates. It has thus been common practice to adopt diagonality (locality) approximations. We demonstrate here that the scattering kernel that controls the self-energies for electron-phonon interactions is generally non-local on the scale of at least a few lattice spacings (and thus within the spatial scale of features in extreme nano-transistors) and for polar optical phonon-electron interactions may be very much longer. It is shown that the diagonality approximation strongly under-estimates the scattering rates for scattering on polar optical phonons. This is an unexpected problem in silicon devices but occurs due to strong polar SO phonon-electron interactions extending into a narrow silicon channel surrounded by high kappa dielectric in wrap-round gate devices. Since dissipative inelastic scattering is already a serious problem for highly confined devices it is concluded that new algorithms need to be forthcoming to provide appropriate and efficient NEGF tools.
影响因子：
3.1
作者：
A. Martinez;M. Aldegunde;N. Seoane;A. Brown;J. Barker;A. Asenov
通讯作者：
A. Martinez;M. Aldegunde;N. Seoane;A. Brown;J. Barker;A. Asenov
影响因子：
4
作者：
F. Banit;S.;A. Knorr;A. Wacker
通讯作者：
A. Wacker
Ni 上的亚纳米 Si 薄膜反应扩散
DOI：
--
发表时间：
2009
期刊：
影响因子：
--
作者：
A. Portavoce;B. Lalmi;G. Tréglia;C. Girardeaux;D. Mangelinck;B. Aufray;J. Bernardini
通讯作者：
J. Bernardini