GaN film growth on Si substrate for sub-wavelength optical MEMS
GaN film growth on Si substrate for sub-wavelength optical MEMS
复制标题
用于亚波长光学 MEMS 的 Si 衬底上的 GaN 薄膜生长
DOI：
10.1109/sensor.2005.1496634
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
K. Hane
中科院分区：
文献类型：
--
作者：
F. Hu;K. Ochi;B. Choi;Y. Kanamori;K. Hane
光学微机电系统（MEMS）技术是一种很有吸引力的光学系统集成技术。另一方面，GaN是一种新的和强大的材料，用于光子器件，如发光二极管和激光二极管。我们正在研究生长在硅衬底上的GaN薄膜的光学MEMS应用，以制造单片结构。本文提出了一种亚波长光学微机电系统，并报道了用分子束外延法在硅衬底上生长GaN薄膜的特性。用电子显微镜和原子力显微镜对生长的GaN薄膜的表面形貌进行了测量。光致发光和X射线衍射测量也进行了我们在几种生长条件下。此外，初步的光栅结构制作的MEMS应用。
Optical MEMS technology is attractive for miniaturizing several optical systems. On the other hand, GaN is a new and powerful material for photonic devices such as light emitting and laser diodes. We are studying GaN film grown on Si substrate for the optical MEMS application in order to fabricate monolithic structure. In this paper, a subwavelength optical MEMS is proposed and the characteristics of GaN film grown on Si substrate by MBE are reported. The surface morphology of the grown GaN film is measured by electron microscopy and atomic force microscopy. Photoluminescence and X-ray diffraction measurements are also carried our under several growth conditions. Furthermore, a preliminary grating structure is fabricated for the MEMS application.
影响因子：
4
作者：
NAKAMURA, S;MUKAI, T;SENOH, M
通讯作者：
SENOH, M