Micro-fabrication of Si-based optomechanical inertial sensors for cryogenic temperatures

Micro-fabrication of Si-based optomechanical inertial sensors for cryogenic temperatures
复制标题

用于低温的硅基光机械惯性传感器的微制造

DOI:
10.1117/12.2594388
复制
发表时间:
2021
期刊:
Applied Optical Metrology IV
影响因子:
--
通讯作者:
Guzman, Felipe
Guzman, Felipe
中科院分区:
--
文献类型:
--
作者:
Nelson, Andrea;Guzman, Felipe

文献摘要

参考文献

被引文献

相似文献

The design of next generation gravitational wave observatories considers operation at cryogenic temperatures to enhance their sensitivity by reducing thermal noise fluctuations.天文台平台上使用惯性传感器来测量局部地震噪声,并通过后处理中的主动控制或减法来抵消其影响。测量谐振器系统中测试质量的位移可以创建紧凑的加速度计系统。目前,还没有能够在低温下运行并提供引力波观测站所需灵敏度的商业惯性传感器。熔融石英等材料在室温下表现出非常低的损耗。然而,这种情况在较低温度下会发生显着变化。与熔融石英不同,晶体硅结构的 Q 因子预计在低温下保持较高,这使其成为此类惯性传感器的可能候选者。我们正在努力用硅晶片制造紧凑的机械谐振器,以测试它们的机械响应。微加工包括优化光刻和博世蚀刻工艺,以在 280 μm、500 μm 和 1 mm 晶圆上进行晶圆硅蚀刻。已成功实现280μm晶圆刻蚀。我们报告这些谐振器的设计、模型和制造进度。
The design of next generation gravitational wave observatories considers operation at cryogenic temperatures to enhance their sensitivity by reducing thermal noise fluctuations. Inertial sensors are used on the observatory platforms to measure local seismic noise and counteract its effects by active control or subtraction in post-processing. Measuring the displacement of a test mass in a resonator system allows for creation of a compact accelerometer system. Currently, there are no commercial inertial sensors available that are capable of operating at cryogenic temperatures and providing the required sensitivities for gravitational wave observatories. Materials such as fused silica exhibit very low losses at room temperature. However, this changes significantly at lower temperatures. Unlike fused silica, the Q factor of crystalline silicon structures is expected to remain high at low temperatures, making it a likely candidate for use in these types of inertial sensors. We are working to fabricate compact mechanical resonators from Si wafers to test their mechanical response. Micro-fabrication consists of optimizing the photolithography and Bosch etching processes for through-wafer Si etching on a 280 μm, 500 μm, and 1 mm wafer. Successful etching on 280 μm wafers has been achieved. We report on the design, model, and fabrication progress of these resonators.
DOI: --
发表时间: 2017
期刊: IEEE/LEOS International Conference on Optical MEMS
影响因子: --
作者:
Y. Tang;A. Sandoughsaz;K. Najafi
通讯作者: K. Najafi
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者:
A. Schroeter;R. Nawrodt;R. Schnabel;S. Reid;I. Martin;S. Rowan;C. Schwarz;T. Koettig;R. Neubert;M. Thurk;W. Vodel;A. Tunnermann;K. Danzmann;P. Seidel
通讯作者: P. Seidel