980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors
980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors
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980 V、33A 常断 4H-SiC 埋栅静态感应晶体管
DOI：
10.4028/www.scientific.net/msf.679-680.662
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
K. Arai
中科院分区：
文献类型：
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作者：
A. Takatsuka;Yasunori Tanaka;K. Yano;T. Yatsuo;K. Arai
在这项工作中，我们成功地开发了高性能的常关型SiC埋栅静电感应晶体管（SiC-BGSIT）。为了实现常关特性，优化了沟道区周围的设计参数，并改进了工艺条件以实现这些参数。关态特性表明，在VG=0 V时，器件的雪崩击穿电压VBR=980 V，在VD=950 V时，器件的漏电流小于0.5 μA。这些结果表明，BGSIT具有良好的常关特性。在VG= 2.5V时，获得了对应于1.89m Ω·cm 2的比导通电阻的28.0m Ω的导通电阻，并且在导通状态特性中，在200 W/cm 2的功率密度下计算出额定电流为33 A。
In this work, we succeeded in developing high performance normally-off SiC buried gate static induction transistors (SiC-BGSITs). To achieve the normally-off characteristics, design parameters around the channel region were optimized and process conditions were improved to realize these parameters. The off-state characteristic of the SiC-BGSIT showed an avalanche breakdown voltage of VBR=980 V at a gate voltage of VG=0 V. Furthermore, the leakage current at VD=950 V is lower than 0.5 μA. These results indicate that the BGSIT has a good normally-off characteristic. At VG=2.5 V, an on-resistance of 28.0 mΩ corresponding to the specific on-resistance of 1.89 mΩ•cm2 was obtained and the current rating was calculated as 33 A at a power density of 200 W/cm2 in the on-state characteristic.
1270V、1.21mΩ cm^2 SiC 埋栅静电感应晶体管 (SiC-BGSIT)
DOI：
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发表时间：
2009
期刊：
Materials Science Forum
影响因子：
--
作者：
Y.Tanaka;K.Yano;M.Okamoto;A.Tanaka;K.Arai;and T.Yatsuo
通讯作者：
and T.Yatsuo