Enhancement of the molecular nitrogen dissociation levels by argon dilution in surface-wave-sustained plasmas
Enhancement of the molecular nitrogen dissociation levels by argon dilution in surface-wave-sustained plasmas
复制标题
在表面波持续等离子体中通过氩稀释提高分子氮解离水平
DOI：
10.1063/1.1359775
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
S. Isber
中科院分区：
文献类型：
--
作者：
M. Tabbal;M. Kazopoulo;T. Christidis;S. Isber
在这项工作中，氮分子在Ar/N2表面波等离子体中的离解水平作为等离子体参数的函数，如Ar在气体混合物中的百分比，在等离子体中吸收的功率，和总压力，以设计一个有效的N-原子源，可用于各种应用，如薄膜沉积和材料表面改性。该等离子体在40.68 MHz下操作，并且在远程等离子体中通过分析第一正分子氮带的光发射来确定氮解离速率。对于所有的操作条件，N2分子的解离速率（[N]/[N2]）增强，随着混合物中的Ar的百分比从0增加到95%，并且测量到高于2.5%的解离速率。当等离子体功率和总压力分别从40 W增加到120 W和从4 Torr增加到7.5 Torr时，解离速率的这种增益变得更加明显。这些结果进行了讨论的动力学的电子，硝基…
In this work, the nitrogen molecular dissociation level in Ar/N2 surface-wave plasma is evaluated as a function of plasma parameters such as Ar percentage in the gas mixture, power absorbed in the plasma, and total pressure in order to design an efficient N-atom source that can be used for various applications such as thin-film deposition and materials surface modification. This plasma is operated at 40.68 MHz and the nitrogen dissociation rate is determined, in the remote plasma, by analyzing the optical emission of the first positive molecular nitrogen band. For all operating conditions, the dissociation rate ([N]/[N2]) of N2 molecules was enhanced, as the percentage of Ar in the mixture increased from 0 to ∼95%, and dissociation rates higher than 2.5% were measured. This gain in the dissociation rate became more pronounced when the plasma power and total pressure increased from 40 to 120 W and from 4 to 7.5 Torr, respectively. These results are discussed in terms of the kinetics of the electrons, nitro...
影响因子：
3.2
作者：
Tada, S;Takashima, S;Sakamoto, Y
通讯作者：
Sakamoto, Y