Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping
Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping
复制标题
通过减少暗电流和背景掺杂，增强 InAs 雪崩光电二极管的低噪声增益
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
S. Bank
中科院分区：
文献类型：
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作者：
S. Maddox;Wenlu Sun;Zhiwen Lu;H. Nair;J. Campbell;S. Bank
我们通过增加p型接触掺杂降低了InAs雪崩光电二极管的室温暗电流，导致少数电子注入p区的能垒增加，而p区是室温暗电流的一个重要来源。此外，通过改进分子束外延生长条件，我们降低了本底掺杂浓度，在反向偏置为1.5 μV时实现了宽达5 m的耗尽宽度。这些改进最终形成了低噪声的InAs雪崩光电二极管，在12∼V的创纪录低反向偏置下，室温倍增增益为 80。
We reduced the room temperature dark current in an InAs avalanche photodiode by increasing the p-type contact doping, resulting in an increased energetic barrier to minority electron injection into the p-region, which is a significant source of dark current at room temperature. In addition, by improving the molecular beam epitaxy growth conditions, we reduced the background doping concentration and realized depletion widths as wide as 5 μm at reverse biases as low as 1.5 V. These improvements culminated in low-noise InAs avalanche photodiodes exhibiting a room temperature multiplication gain of ∼80, at a record low reverse bias of 12 V.
用于红外传感的低噪声高响应度 InAs 电子雪崩光电二极管
DOI：
10.1002/pssc.201100277
发表时间：
2011
期刊：
physica status solidi c
影响因子：
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作者：
Ker P
通讯作者：
Ker P