A thick TiN/TiCN multilayer film by DC magnetron sputtering
A thick TiN/TiCN multilayer film by DC magnetron sputtering
复制标题
直流磁控溅射法制备厚 TiN/TiCN 多层膜
DOI：
10.1016/j.surfcoat.2012.08.045
复制
发表时间：
2012-09
影响因子：
5.4
通讯作者：
Jianyun Zheng, Junying Hao*, Xiaoqiang Liu, Qiu
中科院分区：
文献类型：
--
作者：
Jianyun Zheng, Junying Hao*, Xiaoqiang Liu, Qiu
采用直流磁控溅射技术在高沉积速率下在钢和硅（Si）基板上制备了厚的 TiN/TiCN 多层薄膜。其厚度达到约23.5μm，由30个双层组成。采用X射线光电子能谱（XPS）、X射线衍射（XRD）、横截面高分辨率透射电子显微镜（HRTEM）和场发射扫描电子显微镜（FESEM）来表征Si衬底上薄膜的成分和结构。结果发现，TiCN内层由纳米晶TiCN相和非晶碳混合组成，TiN层呈现纳米柱状结构。钢基体上沉积的薄膜的附着力和硬度分别为29.0N和21.4GPa。结果表明，厚膜仍然保持了优异的机械性能。与钢球滑动的薄膜具有良好的耐磨性，在高转速和大负载的环境空气中具有很长的使用寿命（>11h）。
A thick TiN/TiCN multilayer film was prepared on steel and silicon (Si) substrates using a DC magnetron sputtering technique under a high deposition rate. Its thickness reached about 23.5μm and it was composed of 30 bilayer numbers. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), cross-sectional high resolution transmission electron microscopy (HRTEM) and field emitted scanning electron microscopy (FESEM) were employed to characterize the composition and structure of the film on the Si substrates. It was found that the inner TiCN layers consisted of a mixture nanocrystalline TiCN phase and amorphous carbon, and the TiN layers showed nano-columnar structure. The adhesion force and the hardness of the film deposited on steel substrates were 29.0N and 21.4GPa, respectively. It was revealed that the thick film still maintained the excellent mechanical properties. The film sliding against steel ball had good wear resistance and very long service life (>11h) in ambient air under high rotate speed and large load.
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影响因子：
5.4
作者：
I. Zukerman;A. Raveh;Y. Landau;R. Weiss;R. Shneck;Y. Shneor;H. Kalman;J. E. Klemberg-Saphieha;L. Martinu
通讯作者：
I. Zukerman;A. Raveh;Y. Landau;R. Weiss;R. Shneck;Y. Shneor;H. Kalman;J. E. Klemberg-Saphieha;L. Martinu
影响因子：
5
作者：
H. Strauss;R. Chromik;S. Hassani;J. Klemberg-Sapieha
通讯作者：
H. Strauss;R. Chromik;S. Hassani;J. Klemberg-Sapieha
影响因子：
5.4
作者：
Veprek, S;Argon, AS
通讯作者：
Argon, AS
影响因子：
5.4
作者：
J. C. Sánchez-López;M. Abad;I. Carvalho;R. Galindo;N. Benito;S. Ribeiro;Maria João Henriques;A. Cavaleiro;S. Carvalho
通讯作者：
J. C. Sánchez-López;M. Abad;I. Carvalho;R. Galindo;N. Benito;S. Ribeiro;Maria João Henriques;A. Cavaleiro;S. Carvalho
影响因子：
2.1
作者：
P. Jędrzejowski;J. Klemberg-Sapieha;L. Martinu
通讯作者：
P. Jędrzejowski;J. Klemberg-Sapieha;L. Martinu