High-Performance Photodetectors Based on the 2D SiAs/SnS(2) Heterojunction.
High-Performance Photodetectors Based on the 2D SiAs/SnS(2) Heterojunction.
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基于 2D SiAs/SnS2 异质结的高性能光电探测器
DOI：
10.3390/nano12030371
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发表时间：
2022-01-24
期刊：
影响因子：
--
通讯作者：
Hu Z
中科院分区：
文献类型：
--
作者：
Sun Y;Xie L;Ma Z;Qian Z;Liao J;Hussain S;Liu H;Qiu H;Wu J;Hu Z
构建高性能二维异质结是实现二维材料光电应用的关键解决方案。本文报道了基于二维SiAs/SnS2异质结制备高质量范德华SiAs单晶和高性能光电探测器的研究。采用化学气相输运法（CVT）生长晶体，然后将块状晶体剥离成几层。拉曼光谱表征表明，层间振动的低波数峰随着SiAs厚度的增加而发生明显的位移。此外，当制备p型SiAs/n型SnS2的van der Waals异质结时，在- 1 V - 1 V的源漏电压下，它们表现出突出的整流特性，正向导通电流与反向关断电流之比接近102，在550 nm激发光下表现出1 a /W的静音响应。光响应性和外量子效率是SiAs光电探测器的100倍。我们的实验结果丰富了IVA-VA族p型层状半导体的研究。
Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS2 heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs’ thickness. In addition, when van der Waals heterojunctions of p-type SiAs/n-type SnS2 are fabricated, under the source-drain voltage of −1 V–1 V, they exhibit prominent rectification characteristics, and the ratio of forwarding conduction current to reverse shutdown current is close to 102, showing a muted response of 1 A/W under excitation light of 550 nm. The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors. Our experimental results enrich the research on the IVA–VA group p-type layered semiconductors.
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