Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory
Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory
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用于高性能非易失性存储器的 GaN/AlN 谐振隧道二极管的生长和表征
DOI：
10.1002/pssa.202000495
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Shimizu Mitsuaki
中科院分区：
文献类型：
--
作者：
Nagase Masanori;Takahashi Tokio;Shimizu Mitsuaki
研究了GaN/AlN共振隧穿二极管(RTD)，以实现基于子带间事务和量子阱中电子积累的高速非易失性存储器，该存储器具有工作在皮秒时间尺度上的潜力。通过改变缓冲层的生长条件和结构，改善了GaN/AlN RTDS的晶体质量。通过输入脉冲电压序列，成功地抑制了GaN/AlN RTD的表面粗糙度和位错密度，并观察到了由于子带间跃迁而产生的清晰的开关。然而，通过改善GaN/AlN RTD的晶体质量来改变写入和擦除操作的电压。对GaN/AlN RTD中共振态能级的理论分析表明，写入和擦除操作的电压对势垒宽度和势垒宽度以及量子阱中积累的电子密度非常敏感。在此基础上，研究了用于高性能非易失性存储操作的GaN/AlN RTD的设计。
GaN/AlN resonant tunneling diodes (RTDs) are studied to realize a high‐speed nonvolatile memory based on the intersubband transactions and electron accumulation in the quantum well, which has the potential to operate at picosecond time scales. The crystal quality of GaN/AlN RTDs is improved by changing the growth conditions and structure of the buffer layer. The surface roughness and dislocation density of the GaN/AlN RTDs are successfully suppressed, and clear ON/OFF switching due to intersubband transitions is observed by inputting pulse voltage sequences. However, the voltages for write and erase operations are changed by improving the crystal quality of GaN/AlN RTDs. The theoretical analysis of resonant levels in the GaN/AlN RTDs indicates that the voltages for write and erase operations are very sensitive to the well and barrier widths and the density of electrons accumulating in the quantum well. Based on the results, the design of GaN/AlN RTDs for higher‐performance nonvolatile memory operations is investigated.
双势垒谐振隧道二极管电流-电压特性中出现的断相效应-四个数量级的理论拟合-
影响因子：
1.5
作者：
M. Nagase;K. Furuya;N. Machida
通讯作者：
N. Machida
夹有纳米晶硅二次势垒层的 CaF2/Si/CaF2 谐振隧道量子阱异质结构的电阻切换存储特性
影响因子：
2.3
作者：
Y. Kuwata;K. Suda;Masahiro Watanabe
通讯作者：
Masahiro Watanabe