Electron microscopy of GaAs/MnAs core/shell nanowires
Electron microscopy of GaAs/MnAs core/shell nanowires
复制标题
GaAs/MnAs 核/壳纳米线的电子显微镜
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
S. Mohney
中科院分区：
文献类型：
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作者：
N. Dellas;J. Liang;B. Cooley;N. Samarth;S. Mohney
采用无催化剂分子束外延法制备了GaAs/MnAs核/壳纳米线异质结构。透射电子显微镜（TEM）显示，GaAs核心主要以锌-闪锌矿晶体结构生长，生长方向为[111]。在少量的金属丝中，晶体结构从闪锌矿转变为纤锌矿，其生长方向为[001]。横截面透射电镜显示，在NiAs原型结构中，MnAs在GaAs核心上呈外延生长，外延关系为[202¯1]MnAs∥[111]GaAs和（011¯0）MnAs∥GaAs（1¯10）。当GaAs核心处于纤粒矿结构中时，GaAs与MnAs之间的外延关系变为[0001]MnAs∥[0001]GaAs和（1¯21¯0）MnAs∥(1¯21¯0)GaAs。
GaAs/MnAs core/shell nanowire heterostructures were synthesized by catalyst-free molecular beam epitaxy. Transmission electron microscopy (TEM) reveals that the GaAs core predominantly grows with the zinc-blende crystal structure with a [111] growth direction. In a small population of wires, the crystal structure transitions from zinc blende to wurtzite with a [001] growth direction. Cross-sectional TEM shows that the MnAs grows epitaxially on the GaAs core in the NiAs prototype structure with an epitaxial relation of [202¯1] MnAs∥[111]GaAs and (011¯0) MnAs∥GaAs (1¯10). When the GaAs core is in the wurtzite structure, the epitaxial relation between the GaAs and MnAs changes to [0001] MnAs∥[0001]GaAs and (1¯21¯0) MnAs∥(1¯21¯0)GaAs.
影响因子：
10.8
作者：
Rudolph, Andreas;Soda, Marcello;Reiger, Elisabeth
通讯作者：
Reiger, Elisabeth