Correlation between internal states and creep resistance in metallic glass thin films
Correlation between internal states and creep resistance in metallic glass thin films
复制标题
金属玻璃薄膜的内部状态与抗蠕变性之间的相关性
DOI：
10.1063/5.0039754
复制
发表时间：
2021-02
影响因子：
3.2
通讯作者：
Eckert J.
中科院分区：
文献类型：
--
作者：
Li M.;Tan J.;Qin X. M.;Lu D. H.;Feng Z. X.;Li C. J.;Ketov S. V.;Calin M.;Eckert J.
一些蠕变机制，特别是涉及许多晶体材料位错的蠕变机制，可以通过直接微观结构检查来验证。然而，金属玻璃薄膜（MGTF）是缺乏晶体长程有序的无序材料。即使在今天，非晶态合金的蠕变机制还远没有被完全理解。蠕变变形过程中控制局部化和不稳定性的物理因素仍然难以捉摸。本工作通过在不同基底温度下磁控溅射制备具有高动力学稳定性的Ni60Nb40合金，以获得不同内态的MGTF。我们报告了 MGTF 的内部状态和蠕变抗力之间的密切相关性，并揭示了磁控溅射过程中改变基底温度可以引起 Ni60Nb40 MGTF 的表面形貌、塑性变形抗力和蠕变抗力的变化。基于非晶合金的剪切转变区（STZ）模型解释了蠕变变形机制，我们的结果可能对理解 STZ 在 MGTF 蠕变变形过程中的作用具有重要意义。
Some mechanisms of creep, especially those involving dislocations for many crystalline materials, can be verified by direct microstructural examination. However, metallic glass thin films (MGTFs) are disordered materials lacking the long-range order of crystals. Even today, the creep mechanisms for amorphous alloys are far from being fully understood. The physical factors governing localization and instability during creep deformation are still elusive. In this work, Ni60Nb40 alloys with high kinetic stability were prepared by magnetron sputtering at different substrate temperatures to obtain MGTFs with different internal states. We report a close correlation between the internal states and the creep resistance of the MGTFs and reveal that altering the substrate temperature during magnetron sputtering can induce changes in the surface morphologies, plastic deformation resistance, and creep resistance of Ni60Nb40 MGTFs. The creep deformation mechanism is interpreted based on the shear transformation zone (STZ) model of amorphous alloys, and our results may have implications for understanding the role of STZs during creep deformation of MGTFs.
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影响因子：
4
作者：
Ketov SV;Joksimovic R;Xie G;Trifonov A;Kurihara K;Louzguine-Luzgin DV
通讯作者：
Louzguine-Luzgin DV
DOI：
10.1016/0001-6160(79)90055-5
发表时间：
1979-01-01
期刊：
ACTA METALLURGICA
影响因子：
--
作者：
ARGON, AS
通讯作者：
ARGON, AS
影响因子：
3.2
作者：
Jianchao Ye;J. Chu;Y. Chen;Qu-Quan Wang;Yong Yang
通讯作者：
Jianchao Ye;J. Chu;Y. Chen;Qu-Quan Wang;Yong Yang
影响因子：
9.4
作者：
Perry Ross;S. Küchemann;P. Derlet;H. Yu;W. Arnold;P. Liaw;K. Samwer;R. Maaß
通讯作者：
Perry Ross;S. Küchemann;P. Derlet;H. Yu;W. Arnold;P. Liaw;K. Samwer;R. Maaß
影响因子：
2.1
作者：
Z. Wu;Q. Cao;Y. Ma;C. Wang;S. Y. Liu;X. Qian;X. D. Wang;J. Jiang
通讯作者：
Z. Wu;Q. Cao;Y. Ma;C. Wang;S. Y. Liu;X. Qian;X. D. Wang;J. Jiang