One-step solution deposited all-inorganic perovskite CsPbBr3 film for flexible resistive switching memories
One-step solution deposited all-inorganic perovskite CsPbBr3 film for flexible resistive switching memories
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一步溶液沉积全无机钙钛矿CsPbBr3薄膜用于柔性阻变存储器
DOI:
10.1063/1.5120791
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发表时间:
2019-11
影响因子:
4
通讯作者:
Mingli Yin
中科院分区:
文献类型:
--
作者:
Pengwei Cheng;Yuanyuan Zhu;Jing Shi;Hongjun Wang;Yong Liu;Rui Xiong;Jianhong Wei;Hongyu Ma;Mingli Yin
Halide perovskites have attracted a great deal of attention due to their remarkable performances in solar cells, photodetectors, lasers, light emitting diodes, and memories. However, the issue of low quality of the halide perovskite films still restricts
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影响因子:
27.8
作者:
Ning Wang;Yuanyuan Zhou;Minggang Ju;Hector F. Garces;T. Ding;S. Pang;Xiaoqin Zeng;N. Padture
通讯作者:
Ning Wang;Yuanyuan Zhou;Minggang Ju;Hector F. Garces;T. Ding;S. Pang;Xiaoqin Zeng;N. Padture
影响因子:
27.8
作者:
Conings, Bert;Drijkoningen, Jeroen;Boyen, Hans-Gerd
通讯作者:
Boyen, Hans-Gerd
影响因子:
41.2
作者:
Wang, Chuan;Hwang, David;Javey, Ali
通讯作者:
Javey, Ali
影响因子:
2.3
作者:
D. Walczyk;C. Walczyk;T. Schroeder;T. Bertaud;M. Sowinska;M. Lukosius;M. Fraschke;B. Tillack;C. Wenger
通讯作者:
D. Walczyk;C. Walczyk;T. Schroeder;T. Bertaud;M. Sowinska;M. Lukosius;M. Fraschke;B. Tillack;C. Wenger
影响因子:
3.8
作者:
Q. Le;Jong Won Lee;W. Sohn;Ho Won Jang;J. Kim;S. Y. Kim
通讯作者:
Q. Le;Jong Won Lee;W. Sohn;Ho Won Jang;J. Kim;S. Y. Kim