Surface-induced highly oriented perylo[1,12-b,c,d]selenophene thin films for high performance organic field-effect transistors
Surface-induced highly oriented perylo[1,12-b,c,d]selenophene thin films for high performance organic field-effect transistors
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用于高性能有机场效应晶体管的表面诱导高度取向苝[1,12-b,c,d]硒吩薄膜
DOI：
10.1016/j.orgel.2016.05.017
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发表时间：
2016-08
影响因子：
3.2
通讯作者：
Wang Zhaohui
中科院分区：
文献类型：
--
作者：
Liu Lili;Ren Zhongjie;Xiao Chengyi;Dong Huanli;Yan Shouke;Hu Wenping;Wang Zhaohui
采用气相沉积方法在高取向聚乙烯（PE）衬底上实现了苝[1,12-b,c，d]硒烯（PESE）的外延结晶。在真空蒸发过程中，通过改变PE衬底的温度，可以制备出具有不同结晶形态的定向PESE晶体。当PE衬底温度低于70℃时，产生稀疏分散的PESE板条状晶体，其长轴优先垂直于PE晶体的链方向。而在90°C以上，可以得到与PE膜链方向平行的长轴板状晶体排列的PESE致密膜。制备了基于PESE薄膜的外晶晶体管，并对其性能进行了研究。结果表明，PESE薄膜的制备条件不同，晶体管的电学特性也不同。PESE/PE- sio2 /Si晶体管的性能与PESE/OTS-SiO2/Si晶体管相似，PESE/PE- sio2 /Si晶体管在低温（<70℃）下沉积在取向PE薄膜上。然而，当沉积温度提高到90℃时，晶体管的最大场效应迁移率为4.4 × 10−2cm2V−1s−1，最大开/关比为2.0 × 105，比基于PESE/OTS-SiO2/Si的晶体管高出约2个数量级。
Epitaxial crystallization of perylo[1,12-b,c,d]selenophene (PESE) on highly oriented polyethylene (PE) substrate through vapor phase deposition has been achieved. Oriented PESE crystals with different crystalline morphologies can be fabricated by changing the temperature of PE substrate during vacuum evaporation. When the PE substrate temperature is lower than 70 °C, sparsely dispersed PESE lathlike crystals are produced with their long axis preferentially aligned perpendicular to the chain direction of PE crystals. While the close films of PESE with lathlike crystals aligned with long axis parallel to the chain direction of PE film were obtained above 90 °C. Transistors based on expitaxially crystallized PESE films have been fabricated and the transistor properties were also studied. It is found that transistors show different electrical characteristics depending on the preparation conditions of expitaxially crystallized PESE films. The transistors based on the PESE/PE-SiO2/Si with PESE deposited on oriented PE film at low temperature, i.e., <70 °C, display a similar poor properties with the PESE/OTS-SiO2/Si type transistors. However, when the deposition temperature was elevated to 90 °C, the transistors exhibit a maximum field-effect mobility of 4.4 × 10−2cm2V−1s−1and maximum on/off ratio of 2.0 × 105, which are about 2 orders of magnitudes higher than the PESE/OTS-SiO2/Si based transistors.
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影响因子：
3.6
作者：
Jiang, Wei;Qian, Hualei;Wang, Zhaohui
通讯作者：
Wang, Zhaohui
影响因子：
29.4
作者：
Qianwang Chen;Xiaoguang Li;Yuheng Zhang;Y. Qian
通讯作者：
Qianwang Chen;Xiaoguang Li;Yuheng Zhang;Y. Qian
影响因子：
5.5
作者：
M. Brinkmann;S. Pratontep;A. Chaumont;J. Wittmann
通讯作者：
M. Brinkmann;S. Pratontep;A. Chaumont;J. Wittmann
影响因子：
4
作者：
Kang, JH;Zhu, XY
通讯作者：
Zhu, XY
影响因子：
2.5
作者：
Hai-xin Zhou;Shouke Yan
通讯作者：
Hai-xin Zhou;Shouke Yan