Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching
Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching
复制标题
HCl气蚀在表面控制的6H-SiC衬底上分子束外延生长绝缘AlN
DOI：
10.1063/1.1428620
复制
发表时间：
2002
影响因子：
4
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
N. Onojima;J. Suda;H. Matsunami
采用分子束外延（MBE）技术，利用单质Al和射频等离子体激发氮（N*）在表面控制的6H-SiC衬底上生长了绝缘AlN层。介绍了HCl气相刻蚀作为一种有效的铝氮MBE生长衬底预处理方法。经HCl气蚀预处理的6H-SiC衬底表面无抛光划痕，表面呈原子平面。此外，即使在热清洗之前，也观察到明显的（∛×∛）R30°表面重构。在这种衬底上生长的AlN层没有与表面抛光划痕有关的缺陷，并且具有良好的绝缘特性。
Insulating AlN layers were grown on surface-controlled 6H–SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H–SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident (∛×∛)R30° surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics.
DOI：
10.1007/978-3-642-58562-3
发表时间：
1999
期刊：
--
影响因子：
--
作者：
H. Morkoç
通讯作者：
H. Morkoç