Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution
Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution
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非丝状 a-Si/TiO2 RRAM 中预先存在和产生的缺陷及其对 RTN 幅度分布的影响的研究
DOI：
10.1109/ted.2018.2792221
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发表时间：
2018
影响因子：
3.1
通讯作者：
M. Jurczak
中科院分区：
文献类型：
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作者：
Jigang Ma;Z. Chai;W. Zhang;J. Zhang;Z. Ji;B. Benbakhti;B. Govoreanu;E. Simoen;L. Goux;A. Belmonte;R. Degraeve;G. Kar;M. Jurczak
本文通过结合随机电报噪声（RTN）和恒压应力分析，对非晶Si/TiO 2基非晶a空位调制导电氧化物RRAM器件中预先存在和产生的缺陷进行了广泛的研究，以确定开关和退化机制。RTN的幅度，这导致读取不稳定性，也是第一次在统计上评估在不同阶段的细胞退化，并与不同的缺陷。结果表明，低阻态和高阻态之间的转换与a-Si/TiO_2界面附近“无缺陷”区域中预先存在的缺陷的轮廓调制有关。在这个阶段观测到的RTN振幅很小，并且具有紧密的分布。在较长的应力时间下，由于缺陷的产生而形成渗流路径，这在其分布中引入了较大的RTN幅度和显著的尾部。
An extensive investigation of the preexisting and generated defects in amorphous-Si/TiO2-based nonfilamentary a-vacancy modulated conductive oxide RRAM devices has been carried out in this paper to identify the switching and degradation mechanisms, through a combination of random-telegraph-noise (RTN) and constant-voltage-stress analysis. The amplitude of RTN, which leads to read instability, is also evaluated statistically at different stages of cell degradation and correlated with different defects, for the first time. It is found that the switching between low and high resistance states are correlated with the profile modulation of preexisting defects in the “defect-less” region near the a-Si/TiO2 interface. The RTN amplitude observed at this stage is small and has a tight distribution. At longer stress times, a percolation path is formed due to defects generation, which introduces larger RTN amplitude and a significant tail in its distribution.
DOI：
10.1109/vlsit.2016.7573402
发表时间：
2016-06
期刊：
2016 IEEE Symposium on VLSI Technology
影响因子：
--
作者：
Chai Zheng;Jigang Ma;W. Zhang;B. Govoreanu;Eddy Simoen;J. Zhang;Z. Ji;Rui Gao;Guido Groeseneken;Malgorzata Jurczak
通讯作者：
Chai Zheng;Jigang Ma;W. Zhang;B. Govoreanu;Eddy Simoen;J. Zhang;Z. Ji;Rui Gao;Guido Groeseneken;Malgorzata Jurczak