Anomalous photoluminescence quenching in DIP/MoS2 van der Waals heterostructure: Strong charge transfer and a modified interface
Anomalous photoluminescence quenching in DIP/MoS2 van der Waals heterostructure: Strong charge transfer and a modified interface
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DIP/MoS2 范德华异质结构中的反常光致发光猝灭：强电荷转移和改进的界面
DOI：
10.1016/j.apsusc.2020.147213
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发表时间：
2020-11
影响因子：
6.7
通讯作者：
Xu Mingsheng
中科院分区：
文献类型：
--
作者：
Khan Yahya;Obaidulla Sk Md;Habib Mohammad Rezwan;Kong Yuhan;Xu Mingsheng
由于二维（2D）过渡金属二硫属化合物（TMD）令人着迷的光电性质以及有机分子的柔性、庞大的库和易于制造的工艺，二维TMD材料与有机分子的结合近年来受到了极大的关注。有机半导体可以通过与原子级薄的TMD通过vdW相互作用进行界面连接来增强光电和改善的输运性质。在这里，我们研究了由单层二硫化钼（ML MoS 2）和非平面二茚并萘（DIP）分子制成的II型异质结构的光致发光（PL）特性。与孤立MoS 2的PL相比，DIP/MoS 2中观察到PL强度近300%的急剧猝灭，并且略有红移。DIP/MoS_2异质结中的猝灭现象可以用态密度（DOS）中出现的“类陷阱”态以及DIP的最低未占分子轨道（LUMO）能级到MoS_2的导带底（CBM）能级的电子转移抑制激子/三电子比来解释.此外，异质结构的PL的红移可能是由于弱耦合强度，其比单个层的A-激子共振能量小约8倍，以及非平面DIP基有机层引起的介电屏蔽效应。由于DIP分子的永久偶极矩（有效分子四重矩8.25D），DIP分子与MoS 2层之间预期的强相互作用是另一个原因，这可能会略微降低带隙并导致PL的红移。我们观察到拉曼（A1声子模）发生了蓝移，这可能是由于非平面DIP分子到ML MoS 2上而导致的。DIP/MoS 2异质结构的强PL猝灭行为可以是定制TMD的光电性能的潜在候选者，其可以用于光捕获，并且可以作为下一代TMD/有机基光伏应用。
Due to the fascinating optoelectronic properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) and the flexible nature, vast library, and easy fabrication process of organic molecules, the combination of 2D TMD materials and organic molecules have been gaining enormous attention in recent years. The organic semiconductors can enhance the optoelectronic and improved transport properties by interfacing with atomically thin TMDs through vdW interaction. Here, we investigate the photoluminescence (PL) properties of type-II heterostructure made of monolayer molybdenum disulfide (ML MoS2) and a non-planar Diindenoperylene (DIP) molecules. A drastic quenching of PL intensity nearly 300% is observed with slightly redshift in DIP/MoS2as compared to the PL of isolated MoS2. The observed quenching behavior in DIP/MoS2heterostructure can be explained by the appeared ‘trap – like’ states in density of states (DOS), and suppression of exciton to trion ratio due to electron transfer from the lowest unoccupied molecular orbital (LUMO) level of DIP to the conduction band minima (CBM) of MoS2. Furthermore, the redshift in the PL of heterostructure could be due to weak coupling strength which is ~8 times smaller than that of the energy of A-exciton resonance of individual layers and dielectric screening effect induced by the non-planar DIP based organic layer. The expected strong interaction between the DIP molecule and MoS2layer due to the permanent dipole moments (significant molecular quadruple moment 8.25D) of DIP molecules is another reason, which may slightly reduce the bandgap and results in red-shift of PL. We observed Raman (A1gphonon mode) is blue-shifted, which is supposed to stiffening due to the non-planar DIP molecule onto ML MoS2. The strong PL quenching behavior of DIP/MoS2heterostructure can be a potential candidate for tailoring the optoelectronic properties of TMDs that may demonstrate for light-harvesting and can serve as the next generation TMD/organic-based photovoltaic applications.
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影响因子：
3
作者：
Grimme, Stefan
通讯作者：
Grimme, Stefan
影响因子：
1.9
作者：
Xuena Zhang;D. G. Oteyza;Y. Wakayama;H. Dosch
通讯作者：
Xuena Zhang;D. G. Oteyza;Y. Wakayama;H. Dosch
影响因子：
3.9
作者：
C. D. England;G. Collins;T. Schuerlein;N. Armstrong
通讯作者：
C. D. England;G. Collins;T. Schuerlein;N. Armstrong
影响因子：
4
作者：
N. Mrkyvkova;M. Hodas;J. Hagara;P. Nádaždy;Y. Halahovets;M. Bodík;K. Tokár;J. Chai;S. J. Wang;D. Chi;A. Chumakov;O. Konovalov;A. Hinderhofer;M. Jergel;E. Majková;P. Šiffalovič;F. Schreiber
通讯作者：
N. Mrkyvkova;M. Hodas;J. Hagara;P. Nádaždy;Y. Halahovets;M. Bodík;K. Tokár;J. Chai;S. J. Wang;D. Chi;A. Chumakov;O. Konovalov;A. Hinderhofer;M. Jergel;E. Majková;P. Šiffalovič;F. Schreiber
影响因子：
3.7
作者：
D. G. Oteyza;E. Barrena;Yi Zhang;T. N. Krauss;A. Turak;A. Vorobiev;H. Dosch
通讯作者：
D. G. Oteyza;E. Barrena;Yi Zhang;T. N. Krauss;A. Turak;A. Vorobiev;H. Dosch