Electrodeposition and characterization of copper bismuth selenide semiconductor thin films
Electrodeposition and characterization of copper bismuth selenide semiconductor thin films
复制标题
铜硒化铋半导体薄膜的电沉积及表征
DOI：
10.1016/j.electacta.2012.09.016
复制
发表时间：
2013
影响因子：
6.6
通讯作者：
Li, Jie
中科院分区：
文献类型：
--
作者：
Yang, Jia;Tang, Ding;Lai, Yanqing;Li, Jie
通过在含有 CuCl2、Bi(NO3)3 和 H2SeO3 的水溶液中进行恒电位电沉积，然后进行后退火处理，制备了硒化铜铋薄膜。采用循环伏安法（CV）测试来研究电沉积机理。结合CV、成分和形貌研究确定了适合薄膜制备的沉积电位。沉积薄膜本质上是非晶态，通过 450°C 的退火处理可以实现非晶态到晶态的转变。通过环境扫描电子显微镜、能量色散X射线光谱、X射线衍射、光吸收和光电化学测试分别研究了所制备薄膜的形貌、组成、结构、光学和电学性能。具有三斜结构的退火薄膜表现出0.5-1.2×105cm−1的高吸收系数、1.50eV的光学带隙、p型导电性和良好的光活性，表明在光电转换方面具有潜在的应用前景。
Copper bismuth selenide thin films have been prepared by potentiostatical electrodeposition from an aqueous solution containing CuCl2, Bi(NO3)3and H2SeO3followed by post annealing treatment. Cyclic voltammetry (CV) test was used to investigate the electrodeposition mechanism. The suitable deposition potential for film preparation was determined combining with CV, composition and morphology studies. The as-deposited films are amorphous in nature and the amorphous-to-crystalline transition can be obtained by annealing treatment at 450°C. The morphological, compositional, structural, optical and electrical properties of the prepared films were studied via environmental scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, optical absorption and photoelectrochemical tests, respectively. The annealed film with triclinic structure exhibits high absorption coefficient of 0.5–1.2×105cm−1, an optical band gap of 1.50eV, a p-type conductivity and good photoactivity, indicating potential application in photoelectric conversion.
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影响因子：
6.9
作者：
B. Sankapal;C. Lokhande
通讯作者：
B. Sankapal;C. Lokhande
影响因子：
1.8
作者：
Jagminas, A.;Juskenas, R.;Tomasiunas, R.
通讯作者：
Tomasiunas, R.
影响因子：
4.5
作者：
Mauro C. Santos;S. Machado
通讯作者：
Mauro C. Santos;S. Machado
影响因子：
4.5
作者：
Sunyoung Ham;S. Jeon;Minsoon Park;Seungun Choi;K. Paeng;N. Myung;K. Rajeshwar
通讯作者：
Sunyoung Ham;S. Jeon;Minsoon Park;Seungun Choi;K. Paeng;N. Myung;K. Rajeshwar
DOI：
10.1023/a:1008922229057
发表时间：
1999-07
期刊：
Journal of Materials Science: Materials in Electronics
影响因子：
--
作者：
I. M. Dharmadasa;A. Samantilleke;J. Young;M. H. Boyle;R. Bacewicz;A. Wolska
通讯作者：
I. M. Dharmadasa;A. Samantilleke;J. Young;M. H. Boyle;R. Bacewicz;A. Wolska