The effect of Mn-doped ZnSe passivation layer on the performance of CdS/CdSe quantum dot-sensitized solar cells
The effect of Mn-doped ZnSe passivation layer on the performance of CdS/CdSe quantum dot-sensitized solar cells
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Mn掺杂ZnSe钝化层对CdS/CdSe量子点敏化太阳能电池性能的影响
DOI:
10.1088/1674-1056/ab37f3
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发表时间:
2019-08
影响因子:
1.7
通讯作者:
Peng Shang-Long
中科院分区:
文献类型:
--
作者:
Deng Yun-Long;Xu Zhi-Yuan;Cai Kai;Ma Fei;Hou Juan;Peng Shang-Long
ZnSe as a surface passivation layer in quantum dot-sensitized solar cells (QDSSCs) plays an important role in preventing charge recombination and thus improves power conversion efficiency (PCE). However, as a wide bandgap semiconductor, ZnSe cannot efficiently absorb and convert long-wavelength light. Doping transition metal ions into ZnSe semiconductors is an effective way to adjust the band gap, such as manganese ions. In this paper, it is found by the method of density functional theory calculation that the valence band of ZnSe moves upward with manganese ions doping, which leads to acceleration of charge separation, wider light absorption range and enhanced light harvesting. Finally, ZnSe doped with manganese ions as the passivation layer of the TiO2/CdS/CdSe co-sensitized solar cells has a power conversion efficiency of 6.12%, and the PCE of solar cells increased by 9% compared with undoped (5.62%).
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