Observation of interdot energy transfer between InAs quantum dots
Observation of interdot energy transfer between InAs quantum dots
复制标题
InAs量子点之间点间能量转移的观察
DOI：
10.1063/1.2945289
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发表时间：
2008
影响因子：
4
通讯作者：
N. Yamamoto
中科院分区：
文献类型：
--
作者：
K. Nishibayashi;T. Kawazoe;M. Ohtsu;K. Akahane;N. Yamamoto
我们观察到点间激发能量转移之间的垂直排列的InAs量子点（QD）分离的24 nm厚的间隔层。这种转移是通过小量子点的第一激发态和大量子点的第二激发态之间的光学近场相互作用的共振能量转移来解释的。光致发光强度的激发强度依赖性表明，能量转移时间在15 K时为75 ps，在77 K时为4 ns。我们的实验结果表明，III-V族化合物半导体量子点是合适的纳米光子开关器件。
We observed interdot excitation energy transfer between vertically aligned InAs quantum dots (QDs) separated by a 24-nm-thick spacer layer. This transfer was explained by resonant energy transfer via an optical near-field interaction between the first excited state of small QDs and the second excited states of large QDs. The excitation intensity dependence of the photoluminescence intensities showed that the energy transfer times were 75ps at 15K and 4ns at 77K. Our experimental results indicated that the III-V compound semiconductor QDs are appropriate for nanophotonic switching devices.
DOI：
10.1109/jstqe.2002.801738
发表时间：
2002-07-01
影响因子：
4.9
作者：
Ohtsu, M;Kobayashi, K;Yatsui, T
通讯作者：
Yatsui, T
影响因子：
3.7
作者：
Malik, S;Le Ru, EC;Murray, R
通讯作者：
Murray, R