Efficient optical-to-terahertz conversion in large-area InGaAs photo-Dember emitters with increased indium content.
Efficient optical-to-terahertz conversion in large-area InGaAs photo-Dember emitters with increased indium content.
复制标题
具有增加的铟含量的大面积 InGaAs 光登伯发射器中的高效光学到太赫兹转换。
作者：
I. Ilyakov;B. Shishkin;V. Malevich;D. Ponomarev;R. Galiev;A. Pavlov;A. Yachmenev;S. Kovalev;M. Chen;R. Akhmedzhanov;R. Khabibullin
在这封信中，实验研究了基于光登伯 (PD) 和横向光登伯 (LPD) 效应的大面积无偏压 InGaAs 发射器中 800 nm 飞秒激光脉冲的光到太赫兹 (THz) 转换。我们使用变质缓冲液在 GaAs 衬底上生长亚微米厚的 InxGa1-xAs 层，其中铟摩尔分数 x=0.37、0.53 和 0.70。观察到太赫兹输出能量随着铟含量的增加而强烈增强。在提供最强发射的样品表面（x=0.7），我们制作了一个 1.5cm2 面积的不对称形状的金属光栅，用于 LPD 发射。该 LPD 发射器可实现 0.24⋅10-3 的高转换效率和高达 6 THz 的宽生成带宽。我们还证明，在 1 kHz 和 200 kHz 重复率下运行时，转换效率没有显着差异。我们的结果表明，大面积 LPD 发射器提供了一种方便且有竞争力的方式来生成强烈的高重复率太赫兹脉冲。
In this Letter, optical-to-terahertz (THz) conversion of 800 nm femtosecond laser pulses in large-area bias-free InGaAs emitters based on photo-Dember (PD) and lateral photo-Dember (LPD) effects is experimentally investigated. We use metamorphic buffers to grow sub-micrometer thick InxGa1-xAs layers with indium mole fractions x=0.37, 0.53, and 0.70 on a GaAs substrate. A strong enhancement of THz output energy with an increase of indium content is observed. On the surface of the sample providing the strongest emission (x=0.7), we have fabricated a 1.5cm2 area of asymmetrically shaped metallic grating for LPD emission. This LPD emitter allows achieving high conversion efficiency of 0.24⋅10-3 and a broad generation bandwidth of up to 6 THz. We also demonstrate that there is no significant difference in the conversion efficiency when operating at 1 and 200 kHz repetition rates. Our results show that large-area LPD emitters give a convenient, competitive way to generate intense high-repetition-rate THz pulses.
影响因子：
4
作者：
J. Wallauer;Christian Grumber;V. Polyakov;R. Iannucci;V. Cimalla;O. Ambacher;M. Walther
通讯作者：
J. Wallauer;Christian Grumber;V. Polyakov;R. Iannucci;V. Cimalla;O. Ambacher;M. Walther