Sulfur-Infused Hole Transport Materials to Overcome Performance-Limiting Transport in Colloidal Quantum Dot Solar Cells
Sulfur-Infused Hole Transport Materials to Overcome Performance-Limiting Transport in Colloidal Quantum Dot Solar Cells
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注入硫的空穴传输材料可克服胶体量子点太阳能电池中传输性能限制
DOI：
10.1021/acsenergylett.0c01586
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发表时间：
2020
影响因子：
22
通讯作者：
Thon, Susanna M.
中科院分区：
文献类型：
--
作者：
Chiu, Arlene;Rong, Eric;Bambini, Christianna;Lin, Yida;Lu, Chengchangfeng;Thon, Susanna M.
近年来，胶体量子点（CQD）太阳能电池受益于单结效率的快速上升，并在多结和颜色调谐应用中显示出前景。然而，在下一代太阳能电池的背景下，CQD 光伏发电与成熟技术相比仍然存在效率不足。在这里，我们使用一维光电太阳能电池模拟来表明，最高性能的 PbS CQD 太阳能电池的效率缺陷很大程度上可归因于空穴传输层 (HTL)。我们发现，与直觉相反，增加该层中的掺杂密度和电子迁移率应该对性能产生最大的影响，这归因于 HTL 在光子吸收中发挥的重要作用。我们通过标准 CQD HTL 材料的硫注入进行化学计量控制，以提高载流子迁移率和掺杂密度。这项工作带来了明显的性能提升，最佳器件的功率转换效率达到 10.4%。
Colloidal quantum dot (CQD) solar cells have benefited from rapidly rising single-junction efficiencies in recent years and have shown promise in multijunction and color-tuned applications. However, within the context of next-generation solar cells, CQD photovoltaics still have an efficiency deficit compared to mature technologies. Here, we use one-dimensional optoelectronic solar cell simulations to show that much of this efficiency deficit in the highest-performing PbS CQD solar cells can be attributed to the hole transport layer (HTL). We find that increasing both the doping density and, counterintuitively, the electron mobility in this layer should have the largest impact on performance, attributed to the nontrivial role that the HTL plays in photon absorption. We use stoichiometry control through sulfur infusion of the standard CQD HTL materials to improve the carrier mobilities and doping density. This work resulted in a clear performance improvement, to 10.4% power conversion efficiency in the best device.
影响因子：
5.9
作者：
Liming Liu;S. Z. Bisri;Y. Ishida;D. Hashizume;T. Aida;Y. Iwasa
通讯作者：
Liming Liu;S. Z. Bisri;Y. Ishida;D. Hashizume;T. Aida;Y. Iwasa
全无机纳米晶体太阳能电池器件的室温处理
影响因子：
2.1
作者：
A. Loiudice;A. Rizzo;M. Corricelli;M. Curri;M. Belviso;P. Cozzoli;G. Grancini;A. Petrozza;G. Gigli
通讯作者：
G. Gigli
PbS-ZnO 太阳能电池：数值模拟
DOI：
10.21272/jnep.9(3).03041
发表时间：
2017
期刊：
Journal of Nano-and electronic Physics
影响因子：
--
作者：
J. Ray;T. Chaudhuri;C. Panchal;K. Patel;K. Patel;G. Bhatt;P. Suryavanshi
通讯作者：
P. Suryavanshi