Properties of thin film silicon nitride deposited by hot wire chemical vapor deposition using silane, ammonia, and hydrogen gas mixtures
Properties of thin film silicon nitride deposited by hot wire chemical vapor deposition using silane, ammonia, and hydrogen gas mixtures
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使用硅烷、氨和氢气混合物通过热丝化学气相沉积沉积的薄膜氮化硅的特性
DOI：
10.1063/1.1590053
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发表时间：
2003
影响因子：
3.2
通讯作者：
J. Perkins
中科院分区：
文献类型：
--
作者：
A. Mahan;A. Dillon;L. Gedvilas;D. Williamson;J. Perkins
采用SiH4和NH3混合气相沉积（HWCVD）技术制备了SiH4和NH3混合气相，并在混合气相中加入H2稀释剂，考察了SiH4和NH3混合气相沉积法制备的SiN薄膜的结构。当NH3/SiH4气体流量比大于1/2时，当H2/SiH4气体稀释比高达20/1时，所有膜均为a-SiN:H。虽然H2稀释不会改变膜的基本结构，但会提高气相中NH3解离的效率，并使HWCVD沉积的a- sin:H膜中本已少量的N-H键进一步减少。当氮源气体由NH3变为N2时，观察到局部N键位点的差异。当NH3/SiH4气体比小于1/2且H2稀释度高时，HWCVD可沉积μc-SiN。x射线衍射测量表明，这些薄膜的结构是由嵌入在a-SiN:H基体中的硅晶体组成的。在保持微结晶度的情况下，发现了氮掺入的上限。
The structure of thin film SiN, deposited by the hot wire chemical vapor deposition (HWCVD) technique using SiH4 and NH3 gas mixtures, is examined as H2 dilution is added to the gas flow mixture. For NH3/SiH4 gas flow ratios greater than 1/2, all films are a-SiN:H for H2/SiH4 gas dilution ratios as high as 20/1. While H2 dilution does not change the basic film structure, it does increase the efficiency of NH3 dissociation in the gas phase, and causes a further reduction in the already small amount of N-H bonding in a-SiN:H films deposited by HWCVD. Differences in local N bonding sites are observed when the nitrogen source gas is changed from NH3 to N2. For NH3/SiH4 gas ratios less than 1/2 and with high H2 dilution, deposition of μc-SiN by HWCVD is demonstrated. X-ray diffraction measurements show that the structure of these films consists of silicon crystallites embedded in an a-SiN:H matrix. An upper limit for N incorporation with the preservation of microcrystallinity is found, beyond which the films a...
影响因子：
3.7
作者：
LUCOVSKY, G;YANG, J;CZUBATYJ, W
通讯作者：
CZUBATYJ, W