Enhanced thermoelectric performance of tin oxide through antimony doping and introducing pore structures

Enhanced thermoelectric performance of tin oxide through antimony doping and introducing pore structures
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通过锑掺杂和引入孔结构增强氧化锡的热电性能

DOI:
10.1007/s10853-020-05291-1
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发表时间:
2020-09
影响因子:
4.5
通讯作者:
Tang X. F.
Tang X. F.
中科院分区:
材料科学3区
文献类型:
--
作者:
Zhao X. D.;Deng S. P.;Pan W. F.;Qi N.;Chen Z. Q.;Su X. L.;Tang X. F.

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采用水热法合成了锑掺杂氧化锡纳米粉体。通过控制放电等离子体烧结温度,获得了不同孔隙率的掺锑氧化锡多孔陶瓷。结果表明,锑掺杂可以有效地提高导电性的SnO,而纳米孔充分降低热导率。在500 ℃烧结的样品中,在室温下获得了0.79 W mK的极低的热导率,孔隙率为32.2%。然而,多孔样品表现出差的导电性。随着烧结温度的升高,陶瓷样品的孔隙率逐渐降低。因此,晶格热导率单调增加。随着烧结温度的升高,导电性和Seebeck系数均有所提高。在1000 ℃烧结后,SnSbO样品仍具有7.2%的孔隙率,晶格热导率仍低至4.2 W mK。结果表明,1000 ℃烧结的SnSbO在500 ℃时的ZT最大值为0.05,高于SnO的ZT值。
Antimony-doped tin oxide nanopowders were synthesized by the hydrothermal method. Porous antimony-doped tin oxide ceramics with variant porosity were obtained by controlling the spark plasma sintering temperatures. It was found that antimony doping can effectively improve the electric conductivity of SnO, while the nanosized pores sufficiently reduce the thermal conductivity. An extremely low thermal conductivity of 0.79 W mKis obtained at room temperature in the sample sintered at 500C with porosity of 32.2%. However, the porous sample exhibits poor electrical conductivity. With increasing sintering temperature, the porosity of ceramic samples decreases gradually. Consequently, the lattice thermal conductivity increases monotonically. Meanwhile, both electrical conductivity and Seebeck coefficient show improvement with increasing sintering temperature. After sintering at 1000C, SnSbOsample still owns a porosity of 7.2% and the lattice thermal conductivity is still as low as 4.2 W mK. As a result, a maximum ZT of0.05 is achieved at 500C for SnSbOsintered at 1000C, which is higher than the ZT value ever reported for SnO.
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