Maximum Achievable Rate of Resistive Random-Access Memory Channels by Mutual Information Spectrum Analysis
Maximum Achievable Rate of Resistive Random-Access Memory Channels by Mutual Information Spectrum Analysis
复制标题
通过互信息谱分析实现电阻随机存取存储器通道的最大速率
DOI：
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发表时间：
2023
影响因子：
2.5
通讯作者：
K. A. Schouhamer Immink
中科院分区：
文献类型：
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作者：
Guanghui Song;K. Cai;Ying Li;K. A. Schouhamer Immink
The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak-path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and identically distributed (i.i.d.) binary inputs is derived as an explicit function of channel parameters such as the distribution of cell selector failures and channel noise level. Due to the randomness of cell selector failures, the ReRAM channel demonstrates multi-status characteristic. For each status, it is shown that as the array size is large, the fraction of cells affected by sneak paths approaches a constant value. Therefore, the mutual information spectrum of the ReRAM channel is formulated as a mixture of multiple stationary channels. Maximum achievable rates of the ReRAM channel with different settings, such as single- and across-array codings, with and without data shaping, and optimal and treating-interference-as-noise (TIN) decodings, are compared. These results provide valuable insights on the code design for ReRAM.
用于缓解选择器件故障的电阻存储器中的潜行路径的引导辅助自适应阈值
影响因子：
8.3
作者：
Chen, Zehui;Schoeny, Clayton;Dolecek, Lara
通讯作者：
Dolecek, Lara