Oxidation of Chemically‐Vapor‐Deposited Silicon Carbide in Carbon Dioxide
Oxidation of Chemically‐Vapor‐Deposited Silicon Carbide in Carbon Dioxide
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二氧化碳中化学气相沉积碳化硅的氧化
DOI：
10.1111/j.1151-2916.1998.tb02573.x
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
Q. Nguyen
中科院分区：
文献类型：
--
作者：
E. Opila;Q. Nguyen
化学气相沉积的碳化硅（CVD SiC）在二氧化碳（CO2）中在1200-1400°C的温度下在几种气体流速下氧化96 - 500小时。通过热重分析（TGA）监测氧化增重，发现氧化增重非常小并且与温度无关。可能的限速动力学机制进行了讨论。与在燃烧环境、氧气和水蒸气中也发现的其他氧化剂相比，CO2对SiC的被动氧化可以忽略不计。
Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200–1400°C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate-limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.
影响因子：
3.9
作者：
T. Narushima;T. Goto;Y. Iguchi;T. Hirai
通讯作者：
T. Narushima;T. Goto;Y. Iguchi;T. Hirai