Mean free path limitation of thermoelectric properties of bismuth nanowire
Mean free path limitation of thermoelectric properties of bismuth nanowire
复制标题
铋纳米线热电性能的平均自由程限制
DOI：
10.1063/1.3131842
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发表时间：
2009
影响因子：
3.2
通讯作者：
J. Heremans
中科院分区：
文献类型：
--
作者：
M. Murata;Daiki Nakamura;Y. Hasegawa;T. Komine;T. Taguchi;Shinichiro Nakamura;C. M. Jaworski;V. Jovovic;J. Heremans
为了更好地理解铋微线和纳米线样品的电阻率和塞贝克系数对温度和线径的依赖关系，考虑了极限平均自由程。根据实验测量的迁移率数值计算了块体铋样品的平均自由程限制迁移率，电子和空穴迁移率显著降低到10 μm的平均自由程。因此，极细导线的电阻率对温度的依赖关系与体样试样有很大的不同，体样的电阻率对温度的依赖关系是正的。计算结果表明，随着平均自由程的减小，温度系数逐渐减小，当平均自由程小于1 μm时，温度系数在150 K左右变为负值。也计算了塞贝克系数，但与电阻率相比，塞贝克系数对平均自由程的依赖性较弱。与先前测量的铋微丝或纳米线样品进行了实验比较。
A limiting mean free path was considered in order to better understand the temperature and wire diameter dependence of the resistivity and Seebeck coefficient of bismuth microwire and nanowire samples. The mean free path limited mobility was numerically calculated from experimentally measured mobility in a bulk bismuth sample, and the electron and hole mobilities were dramatically decreased to a 10 μm mean free path. Therefore, the temperature dependence of resistivity in very thin wire was quite different from that of a bulk sample, which had a positive temperature coefficient. The calculations showed that the temperature coefficient decreased gradually with decreasing mean free path, and the coefficient became negative for a mean free path of less than 1 μm at about 150 K. The Seebeck coefficient was also calculated, but showed only a weak dependence on mean free path compared with the resistivity. Experimental comparisons were made to previous measurements of bismuth microwire or nanowire samples, and ...
多晶铋微线阵列中磁阻的纵横比依赖性
DOI：
--
发表时间：
2007
期刊：
Journal of Applied Physic 10
影响因子：
--
作者：
Y.Hasegawa;H.Nakano;H.Morita;A.Kurokouchi;K.Wada;T.Komine;H.Nakamura
通讯作者：
H.Nakamura
DOI：
--
发表时间：
2005
期刊：
Rev.Sci.Instrum. 76
影响因子：
--
作者：
Y.Hasegawa;Y.Ishikawa;H.Shirai H.Morita;A.Kurokouchi;K.Wada;T.Komine;H.Nakamura
通讯作者：
H.Nakamura