An experimental method for determination of dynamic mechanical behavior of materials at high temperatures
An experimental method for determination of dynamic mechanical behavior of materials at high temperatures
复制标题
测定材料高温动态力学行为的实验方法
DOI：
10.1016/j.ijimpeng.2016.12.002
复制
发表时间：
2017-04
影响因子：
5.1
通讯作者：
Yulong Li
中科院分区：
文献类型：
--
作者：
Xinyue Zhang;Jiejian Liu;Cunxian Wang;Yulong Li
提出了一种测量材料高温（1600 ℃）动态力学性能的实验方法。该实验系统包括一个经典的分离式霍普金森压杆，一个用于实现高温的MoSi 2加热源，以及两个附加活塞杆以补充双同步组合系统。试验时，试件可用石棉和半氧化铝陶瓷管支撑。为了估计在冷接触时间（CCT），在此期间，热的试样是在与冷棒被压缩之前接触的时间，CCT的测试试样的热传导，CCT的实验测量的基础上的开关电路，和有限元法（FEM）也被用来计算测试试样的热传导。在试验过程中，采用高速摄像机通过加热炉中的窗口记录试样的图像。为了更好地了解试样氧化的影响，该系统还配备了氩气供应系统，以防止试样在高温下氧化。为了验证所提出的方法在高温下工作的能力，在20至1400 ℃的测试温度范围内以2000 s-1的应变速率对TC 4合金进行了实验，并在20至1600 ℃的温度范围内以250 s-1的应变速率对SiC进行了实验。
An experimental method for measuring dynamic behavior of materials at high temperatures (up to 1600 ℃) was proposed in this work. The experimental system includes a classical split Hopkinson pressure bar, a MoSi2heating source for achieving high temperature, and two piston rods added to complement the double-synchronous assembled system. During the experiments, the specimen can be supported by asbestos and semi-Alumina ceramic tube. To estimate the thermal conduction of the tested specimen during the cold contact time (CCT), the time during which the hot specimen is in contact with the cold bars before being compressed, the CCT was measured experimentally based on an on-off circuit, and the finite element method (FEM) was also employed to calculate the thermal conduction of the tested specimen. High speed camera was employed to record images of the specimen during testing through a window in the heating furnace. For better understanding of the influence of oxidation of specimens, the system was also equipped with an argon supply system to prevent the specimen from oxidation at the high temperatures. To verify the ability of the proposed method to operate at high temperatures, experiments were conducted on an TC4 alloy at test temperatures ranging from 20 to 1400 ℃ at the strain rate of 2000 s−1, and on SiC at temperatures ranging from 20 to 1600 ℃ at the strain rate of 250 s−1.
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DOI：
10.1051/jp4:2006134041
发表时间：
2006-08
期刊：
Journal De Physique Iv
影响因子：
--
作者：
F. Gálvez;D. Cendón;A. Enfedaque;V. Sánchez-Gálvez
通讯作者：
F. Gálvez;D. Cendón;A. Enfedaque;V. Sánchez-Gálvez
影响因子：
2.4
作者：
B. Davoodi;A. Gavrus;E. Ragneau
通讯作者：
B. Davoodi;A. Gavrus;E. Ragneau
DOI：
10.1140/epjst/e2012-01583-5
发表时间：
2012-05
期刊：
The European Physical Journal Special Topics
影响因子：
--
作者：
B. Song;B. Antoun;M. Boston
通讯作者：
B. Song;B. Antoun;M. Boston
影响因子：
4.5
作者：
J. Lankford
通讯作者：
J. Lankford
DOI：
10.1007/978-94-007-2739-7_100651
发表时间：
1964-11
期刊：
Transactions of the American Nuclear Society
影响因子：
--
作者：
R. Dean
通讯作者：
R. Dean