Study of interfacial design for direct-current tribovoltaic generators
Study of interfacial design for direct-current tribovoltaic generators
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直流摩擦发电机界面设计研究
DOI：
10.1016/j.nanoen.2022.106957
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发表时间：
2022-01
期刊：
影响因子：
17.6
通讯作者：
Wei Ou-Yang
中科院分区：
文献类型：
--
作者：
Xiyan Xu;Jun Li;Xinglin Tao;Qi Yan;Han Wu;Zhengxin Guan;Liqiang Liu;Xiangyu Chen;Wei Ou-Yang
摩擦伏效应作为一种新发现的物理现象，在各个领域都有潜在的应用前景。本文采用导体-半导体（C-S）结构系统地研究了摩擦伏发电机的界面特性与其输出性能之间的关系。基于几个相似的物理模型，我们导出了一个方程来量化接触面积、负载力和半导体表面态密度对摩擦伏打发电机性能的影响。实验结果与理论分析吻合较好。此外，还讨论了界面电场和界面磁场对摩擦伏效应的贡献。通过使用外延硅（Si）薄膜，可以调节C-S界面附近的内置电场，从而抑制摩擦伏电荷的复合效应，使摩擦伏发电机的短路电流提高66.83%。为今后柔性直流摩擦伏发电机的电极设计和更好的输出性能奠定了基础。
As a newly discovered physical phenomenon, tribovoltaic effect has potential applications in various fields. Herein, we systematically study the relationship between interfacial properties of the tribovoltaic generator and its output performance using a conductor-semiconductor (C-S) structure. Based on several similar physical models, we derive an equation to quantify the effects of contact area, load force and the density of surface states of the semiconductor on performance of the tribovoltaic generator. The experimental results are in good agreements with the theoretical analysis. Moreover, the contribution of interfacial electric field and interfacial magnetic field to the tribovoltaic effect are discussed, respectively. By using epitaxial silicon (Si) film, the built-in electric field near the C-S interface can be regulated, which leads to suppression of the recombination effect of the tribovoltaic charges, and the short-circuit current of the tribovoltaic generator can be increased by 66.83%. This work paves the way for electrode design and better output performance of flexible DC tribovoltaic generator in the future.
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