Oxidation of H‐terminated Si(100) surfaces studied by high‐resolution electron energy loss spectroscopy
Oxidation of H‐terminated Si(100) surfaces studied by high‐resolution electron energy loss spectroscopy
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通过高分辨率电子能量损失谱研究 H 封端 Si(100) 表面的氧化
DOI：
10.1063/1.359323
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发表时间：
1995
影响因子：
3.2
通讯作者：
Y. Yasuda
中科院分区：
文献类型：
--
作者：
H. Ikeda;K. Hotta;Tohru Yamada;S. Zaima;H. Iwano;Y. Yasuda
用高分辨电子能量损失谱（HREELS）研究了氧在H-封端的Si（100）表面上的吸附。甚至在室温下也发生原子氧的吸附。在HREELS谱中观察到Si-OH伸缩振动和Si-O-Si（B1）振动模，表明原子氧吸附在Si-H键和Si-Si背键上。另一方面，H封端的表面对分子氧非常稳定，分子氧直到380 °C才能吸附在表面上。在380 °C以上观察到分子氧的解离吸附，并且在380-450 °C下吸附的活化能为2.0eV。该值与氢原子从具有单氢化物相的Si（100）表面的脱附能一致。这些结果表明，悬空键是分子氧在Si（100）表面吸附的关键。
The adsorption of oxygen on H‐terminated Si(100) surfaces has been investigated by high‐resolution electron energy loss spectroscopy (HREELS). Adsorptions of atomic oxygen occur even at room temperature. Si‐OH stretching and Si‐O‐Si (B1) vibrational modes are observed in HREELS spectra, which indicates that atomic oxygen is adsorbed on sites of Si—H bonds and Si—Si back bonds. On the other hand, H‐terminated surfaces are very stable for molecular oxygen, which cannot adsorb until 380 °C on the surface. A dissociative adsorption of molecular oxygen is observed above 380 °C and the activation energy of the adsorption is 2.0 eV at 380–450 °C. This value coincides with the desorption energy of hydrogen atoms from a Si(100) surface with the monohydride phase. These results indicate that the dangling bonds are essential to the adsorption of molecular oxygen on Si(100) surfaces.
影响因子：
4
作者：
HIGASHI, GS;CHABAL, YJ;RAGHAVACHARI, K
通讯作者：
RAGHAVACHARI, K