An ultrasensitive molybdenum-based double-heterojunction phototransistor.
An ultrasensitive molybdenum-based double-heterojunction phototransistor.
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DOI：
10.1038/s41467-021-24397-x
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发表时间：
2021-07-02
影响因子：
16.6
通讯作者：
Sun DM
中科院分区：
文献类型：
--
作者：
Feng S;Liu C;Zhu Q;Su X;Qian W;Sun Y;Wang C;Li B;Chen M;Chen L;Chen W;Zhang L;Zhen C;Wang F;Ren W;Yin L;Wang X;Cheng HM;Sun DM
二维（2D）材料因其优异的特性（例如与光的强相互作用、取决于层数的电子和光学特性以及形成混合结构的能力）而有望用于下一代光检测。然而，由于其原子厚度，基于二维材料的光电探测器的固有探测能力较低。光电门控广泛用于提高设备的响应度，但通常会产生较大的噪声电流，导致探测能力有限。在这里，我们报告了一种具有 MoS2 通道和 α-MoO3-x 接触电极的钼基光电晶体管。该器件采用光致势垒降低（PIBL）机制，通道和电极之间的双异质结可以相互提供正反馈。结果，实现了9.8××1016cm Hz1/2 W−1的探测灵敏度。所提出的双异质结 PIBL 机制增加了可用于制造具有超高光敏度的基于二维材料的光电晶体管的技术。在这里，作者利用 MoS2/α-MoO3-x 异质结中的光致势垒降低机制来实现在低偏置电压下具有增强性能和快速响应的二维光电晶体管。
Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS2 channel and α-MoO3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8 × 1016 cm Hz1/2 W−1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity. Here, the authors exploit a photo-induced barrier-lowering mechanism in MoS2/ α-MoO3-x heterojunctions to realize two-dimensional phototransistors with enhanced performance and fast response at low bias voltage.
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通讯作者：
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作者：
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