Enhancing of the rapid thermal annealing for the p-type transition in sodium-doped ZnCdO thin films using RF reactive magnetron sputtering synthesis
Enhancing of the rapid thermal annealing for the p-type transition in sodium-doped ZnCdO thin films using RF reactive magnetron sputtering synthesis
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使用射频反应磁控溅射合成增强钠掺杂 ZnCdO 薄膜 p 型转变的快速热退火
DOI：
10.1016/j.jallcom.2017.01.141
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发表时间：
2017-04
影响因子：
6.2
通讯作者：
J.H. Yang
中科院分区：
文献类型：
--
作者：
S.Q. Lv;Z.W. Wang;B. Yao;J.H. Yang
采用射频反应磁控溅射和快速退火技术在石英衬底上生长了钠掺杂ZnCdO薄膜（ZCO:Na）。霍尔测量结果强调了退火温度（Tann）和退火时间（Tann）对获得p型ZCO:Na薄膜的重要性。发现获得p型ZCO:Na膜的方法是将Na和hi2驱出，同时保留Na在取代位上的位置，这可以通过控制Na相关的中性配合物在适当的tannandtann作用下的解离来实现。ZCO:Na膜（样品D）的最佳载流子浓度为2.98 × 1017cm−3，迁移率为0.225 cm2V−1s−1，电阻率为95.9 Ω cm。XPS结果揭示了ZCO:Na膜中元素的化学键合状态。结合XRD、TEM和XPS的分析结果表明，在ZCO:Na薄膜中，部分Zn位点被Cd和Na原子（CdZnand NaZn）取代。从吸收光谱中观察到，所有ZCO:Na薄膜的带隙都小于纯ZnO薄膜的带隙（3.37 eV）。样品D具有相对较窄的带隙（Eg），为3.05 eV，这使得nazo和其他缺陷受体态的活化能降低，有利于在ZCO:Na薄膜中实现p型导通转换。我们的研究结果表明，溅射后快速退火合成ZCO:Na薄膜是未来器件应用中获得p型电导率的有希望的解决方案。
Sodium-doped ZnCdO films (ZCO:Na) were grown on quartz substrates by radio frequency (RF) reactive magnetron sputtering followed by rapid annealing technique. Hall measurements results underscore the importance of annealing temperature (Tann) and annealing time (tann) in obtaining p-type ZCO:Na film. It is found that the recipe to acquiring p-type ZCO:Na film is drive out Naiand Hiwhile preserving Na at the substitutional sites, which can be realized through managing the dissociation of Na-relevant neutral complexes under appropriateTannandtann. The optimal p-type ZCO:Na film (sample D) was obtained when theTannandtannwere set to 600 °C and 30 min, respectively, which possesses a carrier concentration of 2.98 × 1017cm−3, a mobility of 0.225 cm2V−1s−1and a resistivity of 95.9 Ω cm. XPS results revealed the chemical bonding states of elements in ZCO:Na film. Combining the results of XRD, TEM and XPS, it is demonstrated that the substitution of some Zn sites by Cd and Na atoms (CdZnand NaZn) takes place in ZCO:Na film. It is observed from absorption spectrum that the band gaps of all ZCO:Na films are smaller than that (3.37 eV) of pure ZnO film. Sample D has a relatively narrow band gap (Eg) of 3.05 eV, which led to the decrease of the activation energy of NaZnor other defect acceptor states, exhibiting advantages to realize the p-type conduction conversion in ZCO:Na film. Our results show that the sputtering followed by rapid annealing synthesis route of ZCO:Na film is a promising solution toward obtaining p-type conductivity for future device applications.
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影响因子：
2.8
作者：
D. Mishra;Pravin Kumar;M. Sharma;J. Das;Surjeet Singh;B. Roul;S. Varma;R. Chatterjee;V. Srinivasu;D. Kanjilal
通讯作者：
D. Mishra;Pravin Kumar;M. Sharma;J. Das;Surjeet Singh;B. Roul;S. Varma;R. Chatterjee;V. Srinivasu;D. Kanjilal
DOI：
10.1007/s10854-016-4897-3
发表时间：
2016-05
期刊：
Journal of Materials Science: Materials in Electronics
影响因子：
--
作者：
Z. Hua;Yanping Song;Y. Sui;Yanjie Wu;Shiquan Lv;B. Yao;Li Xiao;Zhanwu Wang;Xiaoyang Liu
通讯作者：
Z. Hua;Yanping Song;Y. Sui;Yanjie Wu;Shiquan Lv;B. Yao;Li Xiao;Zhanwu Wang;Xiaoyang Liu
影响因子：
3.7
作者：
Youzhang Zhu;Guangde Chen;H. Ye;A. Walsh;C. Moon;S. Wei
通讯作者：
Youzhang Zhu;Guangde Chen;H. Ye;A. Walsh;C. Moon;S. Wei
影响因子：
6.2
作者：
Rao, T. Prasada;Kumar, M. C. Santhosh;Ashok, M.
通讯作者：
Ashok, M.
影响因子：
3.2
作者：
Coppa, BJ;Fulton, CC;Smith, DJ
通讯作者：
Smith, DJ