Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices
Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices
复制标题
使用生物纳米工艺和中性束蚀刻制造二维硅纳米盘阵列，用于真实的量子效应器件
DOI：
10.1143/jjap.48.04c187
复制
发表时间：
2009
影响因子：
1.5
通讯作者：
S. Samukawa
中科院分区：
文献类型：
--
作者：
Chi;M. Igarashi;M. Woné;Y. Uraoka;T. Fuyuki;M. Takeguchi;I. Yamashita;S. Samukawa
采用生物纳米工艺、先进的刻蚀技术，包括三氟化氮和氢自由基处理（NF3处理）和无损伤氯中性束（NB），成功制备了高密度、大面积、均匀的二维硅纳米盘阵列。通过使用中性束氧化（NBO）形成的表面氧化物用于制备二维纳米尺寸的铁芯阵列作为蚀刻掩模，由于表面氧化物的悬挂键，获得了有序的二维Si纳米盘阵列。通过改变NF 3处理时间而不改变每个纳米盘的量子效应，我们可以控制相邻纳米盘之间的差距。制作了一个双电极器件，研究了二维硅纳米盘阵列中的电子输运。由于邻近电流渗流路径的纳米盘的充放电，可以清晰地观察到电流的涨落和随时间变化的电流，这种新结构在未来的新型量子效应器件中具有很大的潜力.
A high-density, large-area, and uniform two-dimensional (2D) Si-nanodisk array was successfully fabricated using the bio-nano-process, advanced etching techniques, including a treatment using nitrogen trifluoride and hydrogen radical (NF3 treatment) and a damage-free chlorine neutral beam (NB). By using the surface oxide formed by neutral beam oxidation (NBO) for the preparation of a 2D nanometer-sized iron core array as an etching mask, a well-ordered 2D Si-nanodisk array was obtained owing to the dangling bonds of the surface oxide. By changing the NF3 treatment time without changing the quantum effect of each nanodisk, we could control the gap between adjacent nanodisks. A device with two electrodes was fabricated to investigate the electron transport in a 2D Si-nanodisk array. Current fluctuation and time-dependent currents were clearly observed owing to the charging-discharging of the nanodisks adjacent to the current percolation path. The new structure may have great potential for future novel quantum effect devices.
二维硅耦合点器件中的双极库仑阻塞特性
DOI：
--
发表时间：
2003
期刊：
IEEE Trans. on Nanotechnology 2
影响因子：
--
作者：
R.Nuryadi;H.Ikeda;Y.Ishikawa;M.Tabe
通讯作者：
M.Tabe