Electron Beam Doping in Damageless Regions of Semiconductors by the Kick-Out Mechanism (Interstitialcy and Direct Interstitial Mechanism)
Electron Beam Doping in Damageless Regions of Semiconductors by the Kick-Out Mechanism (Interstitialcy and Direct Interstitial Mechanism)
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通过踢出机制（间隙和直接间隙机制）在半导体无损区域进行电子束掺杂
DOI：
10.1143/jjap.37.6998
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发表时间：
1998
影响因子：
1.5
通讯作者：
H. Fujimoto
中科院分区：
文献类型：
--
作者：
T. Wada;H. Fujimoto
结果表明，由于电子束超扩散掺杂，在无损伤Si和GaAs中杂质扩散过程中，杂质杂质原子在置换位和间隙位之间的交换是由kick-out机制控制的。它们在半导体中的扩散分布与Seeger踢出扩散理论的精确解符合得很好。
It is demonstrated that the interchange of impurity foreign atoms between substitutional and interstitial sites occurring during the diffusion of impurities in damage-free Si and GaAs due to the electron beam doping by superdiffusion is controlled by the kick-out mechanism. Their diffusion profiles in semiconductors are in good agreement with the exact solution of Seeger's theory of the kick-out diffusion.
室温下半导体电子束掺杂（超扩散）技术
DOI：
--
发表时间：
2003
期刊：
Defect and Diffusion Forum Vols.221-223
影响因子：
--
作者：
Takao Wada;Hiroshi Fujimoto
通讯作者：
Hiroshi Fujimoto