In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy
In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy
复制标题
使用衰减全反射红外光谱原位探测氢化非晶硅上的表面氢化物
DOI：
10.1116/1.1469012
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
E. Aydil
中科院分区：
文献类型：
--
作者：
W. Kessels;D. Marra;Van de Sanden;E. Aydil
提出了一种基于衰减全反射傅里叶变换红外光谱(ATR-FTIR)的原位检测等离子体沉积氢化非晶硅(a-Si：H)薄膜表面氢化物及其表面浓度的方法。通过将a-Si：H薄膜暴露在低密度Ar等离子体中的低能离子中，并通过比较低能离子轰击前后的红外光谱，可以灵敏地将表面氢化物的吸收与掺入薄膜中的体氢化合物的吸收分开。与其他利用表面氢与氢的同位素交换的方法进行了实验比较，得到了很好的一致性，并讨论了不同方法的优缺点。此外，还给出了根据文献数据确定氢化单晶硅表面氢键组成的方法，并对氢化硅表面氢键组成进行了定量计算。
An in situ method based on attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) is presented for detecting surface silicon hydrides on plasma deposited hydrogenated amorphous silicon (a-Si:H) films and for determining their surface concentrations. Surface silicon hydrides are desorbed by exposing the a-Si:H films to low energy ions from a low density Ar plasma and by comparing the infrared spectrum before and after this low energy ion bombardment, the absorptions by surface hydrides can sensitively be separated from absorptions by bulk hydrides incorporated into the film. An experimental comparison with other methods that utilize isotope exchange of the surface hydrogen with deuterium showed good agreement and the advantages and disadvantages of the different methods are discussed. Furthermore, the determination of the composition of the surface hydrogen bondings on the basis of the literature data on hydrogenated crystalline silicon surfaces is presented, and quantification of t...
DOI：
10.1116/1.575980
发表时间：
1989-05-01
期刊：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
影响因子：
--
作者：
CHABAL, YJ;HIGASHI, GS;BURROWS, VA
通讯作者：
BURROWS, VA