Doped organic transistors operating in the inversion and depletion regime.
Doped organic transistors operating in the inversion and depletion regime.
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DOI：
10.1038/ncomms3775
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发表时间：
2013
影响因子：
16.6
通讯作者：
Leo, Karl
中科院分区：
文献类型：
--
作者：
Luessem, Bjoern;Tietze, Max L.;Kleemann, Hans;Hossbach, Christoph;Bartha, Johann W.;Zakhidov, Alexander;Leo, Karl
反转场效应晶体管是现代微电子学的基本器件，如今在每一个最先进的计算机芯片上被使用超过10亿次。在未来，这种刚性技术将以极低的成本生产柔性电子产品。有机场效应晶体管有潜力成为柔性电子器件的基本器件，但仍需要大量改进。特别是，尽管有20多年的研究，有机反转模式晶体管至今尚未报道。本文讨论了用我们的有机掺杂技术首次实现的有机反转晶体管和优化的有机耗尽晶体管。我们发现晶体管参数，特别是阈值电压和ON/OFF比，可以通过掺杂浓度和晶体管沟道厚度来控制。少数载流子注入到掺杂晶体管通道是通过掺杂触点实现的，这允许形成反转层。反转型晶体管——广泛用于硅基工业——被认为无法在有机器件中获得。l<s:2> ssem等人通过在源极和漏极触点掺杂而不降低其ON/OFF比，实现了首个倒置的有机场效应晶体管。
The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer. Inversion type transistors – which are widely used in silicon-based industries – are thought to not be obtainable in organic devices. Lüssem et al. realize the first inversion organic field-effect transistor by doping at the source and drain contacts without degrading its ON/OFF ratio.
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