In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability.
In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability.
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DOI：
10.1109/led.2021.3055787
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发表时间：
2021-03
期刊：
影响因子：
--
通讯作者：
Franklin AD
中科院分区：
文献类型：
--
作者：
Cardenas JA;Lu S;Williams NX;Doherty JL;Franklin AD
离子凝胶基电介质长期以来一直被认为可以在印刷薄膜晶体管（TFTs）中实现低压操作，但它们与就地打印（一种流线型的直接写入打印方法，设备在中期或后期处理中永远不会离开打印机）的兼容性仍未得到探索。在这里，我们展示了一种在低温（80°C）下生产低压电解门控碳纳米管（CNT）薄膜晶体管的简单快速的四步原位打印工艺。该工艺包括使用聚合物包裹的碳纳米管油墨用于印刷通道，银纳米线油墨用于印刷电极，咪唑基离子凝胶油墨用于印刷栅极电介质。我们发现，使用升高的压温（与外部冲洗或后处理退火相反），可以优化碳纳米管薄膜和原位打印离子凝胶的效果，其中所得器件的通/关电流比超过103，迁移率超过10 cm2V−1s−1，门滞回仅为0.1 V。此外，设备在机械应变和长期偏压下进行了测试，在14小时的偏压测试过程中显示出卓越的灵活性和电化学稳定性。本文提出的研究结果扩大了就地印刷（PIP）器件的潜在范围，并为改善电解门控晶体管的偏置应力稳定性揭示了新的研究途径。
Ion gel-based dielectrics have long been considered for enabling low-voltage operation in printed thin-film transistors (TFTs), but their compatibility with in-place printing (a streamlined, direct-write printing approach where devices never leave the printer mid- or post-process) remains unexplored. Here, we demonstrate a simple and rapid 4-step in-place printing procedure for producing low-voltage electrolyte-gated carbon nanotube (CNT) thin-film transistors at low temperature (80 °C). This process consists of the use of polymer-wrapped CNT inks for printed channels, silver nanowire inks for printed electrodes, and imidazolium-based ion gel inks for printed gate dielectrics. We find that the efficacy of rinsing CNT films and printing an ion gel in-place is optimized using an elevated platen temperature (as opposed to external rinsing or post-process annealing), where resultant devices exhibited on/off-current ratios exceeding 103, mobilities exceeding 10 cm2V−1s−1, and gate hysteresis of only 0.1 V. Additionally, devices were tested under mechanical strain and long-term bias, showing exceptional flexibility and electrochemical stability over the course of 14-hour bias tests. The findings presented here widen the potential scope of print-in-place (PIP) devices and reveal new avenues of investigation for the improvement of bias stress stability in electrolyte-gated transistors.
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