Electronic imaging of subcritical defect accumulation in single crystal silicon under fatigue loading
Electronic imaging of subcritical defect accumulation in single crystal silicon under fatigue loading
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疲劳载荷下单晶硅亚临界缺陷积累的电子成像
DOI：
10.1016/j.sna.2018.06.016
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
H. Izumi
中科院分区：
文献类型：
--
作者：
S. Kamiya;Akira Kongo;H. Sugiyama;H. Izumi
高分辨率电子束感应电流（EBIC）成像技术成功地显示了单晶硅在50 °C、相对湿度为75%的压缩疲劳载荷下的缺陷积累过程。经过一定次数的疲劳循环后，扫描电镜下的EBIC图像中出现了由深蚀刻应力集中缺口产生的暗线状缺陷对比，但在二次电子下大多不可见。这种线状缺陷对比最终沿着预期的方向延伸，这与具有最大剪切应力的硅的晶体滑移系统之一相对应。因此，我们强烈认为，在重复加载下，块状硅中会发生晶体滑移，这可能导致局部应力集中，进而导致疲劳断裂，特别是在疲劳循环中施加拉应力的情况下。
High resolution electron beam induced current (EBIC) imaging technique successfully visualized defect accumulation process in single crystal silicon under compression fatigue loading at 50 °C with the relative humidity of 75%. Dark line-like defect contrast emanating from deep-etched stress concentration notch appeared in EBIC images in a scanning electron microscope, after a certain number of fatigue cycles, but they were mostly invisible with secondary electron. This line-like defect contrast eventually extended along the direction which was expected in correspondence to one of the crystal slip systems of silicon with the largest resolved shear stress. Hence it is strongly suggested that crystal slips take place in bulk silicon under repeated loading, which presumably leads to local stress concentration and further to fatigue fracture especially in case tensile stress is applied in fatigue cycles.
LP-CVD多晶硅薄膜循环张力下的疲劳行为
DOI：
--
发表时间：
2009
期刊：
影响因子：
--
作者：
K. Takechi;Q. Chen;K. Kusukawa;S. Kariya;M. Ohira;K. Suzuki
通讯作者：
K. Suzuki