Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells
Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells
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电场和载流子局域化对 AlGaN 量子阱中载流子动力学的影响
DOI：
10.12693/aphyspola.114.1247
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发表时间：
2008
影响因子：
0.7
通讯作者：
R. Gaska
中科院分区：
文献类型：
--
作者：
J. Mickevičius;G. Tamulaitis;E. Kuokštis;M. Shur;J. Yang;R. Gaska
研究了高Al含量AlGaN/AlGaN多量子阱中非平衡载流子的动力学。用金属-有机化学气相沉积方法生长了一组宽度在1.65~5.0 nm之间的多量子阱。用准稳态条件下的光致发光光谱对其结构进行了研究。观察到的光致发光带峰的蓝移归因于内置电场的屏蔽。积分光致发光强度对激发态和温度的依赖关系显示出很强的载流子局域化效应。
Dynamics of nonequilibrium carriers in high-Al-content AlGaN/AlGaN multiple quantum wells was studied. A set of multiple quantum wells with well widths varying from 1.65 to 5.0 nm was grown by metal-organic chemical vapor deposition. The structures were investigated by photoluminescence spectroscopy under quasi-steady-state conditions. The observed blueshift of the photoluminescence band peak was attributed to the screening of the built-in electric field. The integrated photoluminescence intensity dependence on excitation and temperature showed a strong influence of carrier localization.
影响因子：
4
作者：
Hirayama, Hideki;Yatabe, Tohru;Kamata, Norihiko
通讯作者：
Kamata, Norihiko