Quantum confined Stark effect and corresponding lifetime reduction in a single InxGa1−xN quantum disk
Quantum confined Stark effect and corresponding lifetime reduction in a single InxGa1−xN quantum disk
复制标题
单个 InxGa1−xN 量子盘中的量子限制斯塔克效应和相应的寿命缩短
DOI：
10.1063/1.3257698
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发表时间：
2009
影响因子：
4
通讯作者：
R. Taylor
中科院分区：
文献类型：
--
作者：
M. Holmes;Y. S. Park;J. Warner;R. Taylor
时间积分和时间分辨显微光致发光的研究进行了嵌入在GaN纳米柱分子束外延生长的InxGa 1 −xN量子盘。从受限态的发射在3.33 eV处被检测到，并观察到随着激发功率的蓝移;电荷屏蔽和量子限制斯塔克效应的结果。由于减少的能带弯曲和由此产生的受限电子和空穴波函数的重叠增加，测量的发射寿命随着激发功率的增加而降低。蓝移和寿命降低的饱和度遵循峰强度的饱和度，表明斯塔克屏蔽过程。
Time-integrated and time-resolved microphotoluminescence studies were carried out on InxGa1−xN quantum disks embedded in GaN nanocolumns grown by molecular beam epitaxy. Emission at ∼3.33 eV from confined states was detected and observed to blueshift with excitation power; a result of charge screening and the quantum confined Stark effect. Due to the reduced band bending and resulting increased overlap of the confined electron and hole wave functions, the lifetime of the emission was measured to decrease with increasing excitation power. The saturation of the blueshift and lifetime reduction follows that of the peak intensity, indicating a Stark screening process.
影响因子：
3.5
作者：
Park, CM;Park, YS;Kang, TW
通讯作者：
Kang, TW
影响因子：
4
作者：
Kawakami, Y.;Suzuki, S.;Kishino, K.
通讯作者：
Kishino, K.