In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO
In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO
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ZnO 螺旋波激发等离子体溅射外延过程中 Zn 物种的原位光谱控制
DOI：
10.1063/1.1616650
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发表时间：
2003
影响因子：
4
通讯作者：
S. Chichibu
中科院分区：
文献类型：
--
作者：
T. Koyama;T. Onuma;S. Chichibu
利用螺旋波激发等离子体溅射外延技术，对未掺杂的氧化锌靶溅射羽流中的原子物种进行了鉴定。发现发光的锌物种是激发的中性锌离子(锌离子)和锌离子(锌离子)，并且锌离子的密度独立地由靶偏压(Vt)控制，靶偏压在保持等离子体密度不变的同时加速了Ar离子的速度。氧化锌薄膜的形成似乎有一定的阈值Vt(在600−°C时约为200 V)，生长速率随Vt的增大而增大，但随衬底温度的升高而减小，表明生长速率受锌的附着系数的限制。由于锌的供应方式与激光分子束外延的情况类似，在(1120)蓝宝石衬底上生长的(0001)氧化锌具有超光滑的表面，具有原子平坦的平台，并在低温下表现出激子反射异常和发光峰。
Atomic species in the sputtered plumes from undoped ZnO target were identified by means of emission spectroscopy during helicon-wave-excited-plasma sputtering epitaxy. Luminescent Zn species were found to be excited neutral zinc (Zn*) and zinc cations (Zn+*), and Zn* density was independently controlled by the target bias (Vt) that accelerates the velocity of Ar cations while keeping the plasma density constant. The ZnO film formation seemed to have certain threshold Vt (around −200 V at 600 °C), and the growth rate increased with the magnitude of Vt but decreased with the substrate temperature, indicating that the growth rate is limited by the sticking coefficient of Zn. As a result of the supply mode of Zn that is similar to the case for laser molecular-beam epitaxy, the epitaxial (0001) ZnO on (1120) sapphire substrate had ultra-smooth surfaces having atomically flat terraces, and exhibited excitonic reflectance anomalies and luminescence peaks at low temperature.
螺旋波激发等离子体溅射制备Ga掺杂ZnO薄膜
DOI：
--
发表时间：
2008
期刊：
Phvsica Status Solidi (c)5
影响因子：
--
作者：
S. Takahata;K. Saiki;T. Imao;H. Nakanishi;M. Sugiyama;S. F. Chichibu;H.Amaike;S.Takahata;S.Masaki;S. Takahata;S. Masaki
通讯作者：
S. Masaki