Tuning of spin relaxation and the Kondo effect in copper thin films by ionic gating
Tuning of spin relaxation and the Kondo effect in copper thin films by ionic gating
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通过离子门控调节铜薄膜中的自旋弛豫和近藤效应
DOI：
10.1103/physrevb.106.085118
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发表时间：
2022-08
影响因子：
3.7
通讯作者：
Yi Ji
中科院分区：
文献类型：
--
作者：
Xingyu Shen;Yunjiao Cai;Yizheng Wu;Yi Ji
Spin relaxation length is a fundamental material parameter that influences all aspects of spin dependent transport. The ability to tune the spin relaxation length leads to novel spintronic phenomena and functionalities. We explore the tunability of the spin relaxation length in the mesoscopic Cu channels of nonlocal spin valves by using the ionic gating technique via a ${mathrm{Li}}^{+}$ containing solid polymer electrolyte. At 5 K, the Cu spin relaxation length ${ensuremath{lambda}}_{mathrm{Cu}}$ is tuned reversibly between 670 and 410 nm and the Cu resistivity ${ensuremath{rho}}_{mathrm{Cu}}$ is tuned by 9%. The strength of the Kondo effect due to the Fe impurities in Cu is tuned by one order of magnitude. At 295 K, ${ensuremath{lambda}}_{mathrm{Cu}}$ is tuned between 380 and 300 nm and ${ensuremath{rho}}_{mathrm{Cu}}$ is tuned by 7%. A gradual amplification of the tuning ranges by repeated gate cycling is observed and clearly suggests an electrochemical origin. Tunable spin relaxation in simple metals enriches functionalities in metal-based spintronics and shines light on fundamental spin relaxation mechanisms.
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影响因子：
38.3
作者：
Das, A.;Pisana, S.;Sood, A. K.
通讯作者：
Sood, A. K.
介观铜线中整体自旋翻转的可能性较低
DOI：
10.1088/0022-3727/49/18/185003
发表时间：
2016
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
Cai Yunjiao;Luo Yongming;Zhou Chao;Qin Chuan;Chen Shuhan;Wu Yizheng;Ji Yi
通讯作者：
Ji Yi
影响因子：
56.9
作者：
Jeong, Jaewoo;Aetukuri, Nagaphani;Parkin, Stuart S. P.
通讯作者：
Parkin, Stuart S. P.
影响因子：
64.8
作者：
Jedema, FJ;Filip, AT;van Wees, BJ
通讯作者：
van Wees, BJ
影响因子：
19.6
作者：
Antonio Benitez, L.;Sierra, Juan F.;Valenzuela, Sergio O.
通讯作者：
Valenzuela, Sergio O.