10 Gb/s optical random access memory (RAM) cell.
10 Gb/s optical random access memory (RAM) cell.
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10 Gb/s 光学随机存取存储器 (RAM) 单元。
DOI：
10.1364/ol.44.001821
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发表时间：
2019
期刊：
影响因子：
3.6
通讯作者：
C. Vagionas
中科院分区：
文献类型：
--
作者：
A. Tsakyridis;T. Alexoudi;A. Miliou;N. Pleros;C. Vagionas
光学随机存取存储器（RAM）被认为是其电子对应物的高带宽替代品，提高了对超快速操作的期望，可以解决ns长的电子RAM访问瓶颈。然而，实验证明光学ram仅限于5 GHz，无法验证其速度优于电子器件的优势。在本文中，我们展示了第一个全光RAM单元，它可以同时执行10gb /s的写入和读取功能，与最先进的光学RAM演示相比，速度提高了100%。为了实现这一点，所提出的RAM单元部署了一个单片集成的InP光触发器和一个半导体光放大器-马赫-曾德尔干涉仪（SOA-MZI）开/关开关，配置为一个强饱和微分偏置接入门。无错误操作的写入和读取操作分别为10 Gb/s，功率分别为6.2 dB和0.4 dB，实现了最快的RAM单元功能。
Optical random access memories (RAMs) have been conceived as high-bandwidth alternatives of their electronic counterparts, raising expectations for ultra-fast operation that can resolve the ns-long electronic RAM access bottleneck. However, experimentally demonstrated optical RAMs have been limited to up to 5 GHz only, failing to validate the speed advantages over electronics. In this Letter, we demonstrate the first all-optical RAM cell that performs both Write and Read functionalities at 10 Gb/s, reporting on a 100% speed increase compared to state-of-the-art optical RAM demonstrations. To achieve this, the proposed RAM cell deploys a monolithically integrated InP optical Flip-Flop and a Semiconductor optical amplifier-Mach-Zehnder Interferometer (SOA-MZI) On/Off switch configured to operate as a strongly saturated differentially-biased access gate. Error-free operation is demonstrated at 10 Gb/s for both Write and Read operations with 6.2 dB and 0.4 dB power, respectively, achieving the fastest reported RAM cell functionalities.
影响因子：
35
作者：
Rios, Carlos;Stegmaier, Matthias;Pernice, Wolfram H. P.
通讯作者：
Pernice, Wolfram H. P.