Low-temperature (∼250°C) route to lateral growth of ZnO nanowires
Low-temperature (∼250°C) route to lateral growth of ZnO nanowires
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ZnO 纳米线横向生长的低温（~250°C）途径
DOI：
10.1063/1.2142090
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发表时间：
2005
影响因子：
4
通讯作者：
Dong Eon Kim
中科院分区：
文献类型：
--
作者：
Congkang Xu;K.;Junghwan Chun;Dong Eon Kim
Zinc oxide nanowires were obtained through a vapor transport route at temperatures as low as around 250°C. The diameters of the nanowires are ∼40nm and their lengths reach up to a few microns. The high-resolution transmission electron microscopy showed that ZnO nanowires are of hexagonal wurtzite structures with the [112¯0] growth direction. Raman spectrum reveals that the ZnO nanowires are of high-quality crystal and have an oxygen deficiency. The energy dispersive x-ray spectroscopy result verifies that the nanowires contain a small amount of Bi besides Zn and O. The investigation of the growth mechanism suggests that BiI3 plays a key role on the fabrication of ZnO nanowires around 250°C.
DOI：
10.1109/jstqe.2002.801738
发表时间：
2002-07-01
影响因子：
4.9
作者：
Ohtsu, M;Kobayashi, K;Yatsui, T
通讯作者：
Yatsui, T
ZnO : X (X = Li, Mg) 薄膜的电光性质
DOI：
--
发表时间：
2002
期刊：
Journal of Crystal Growth 237
影响因子：
--
作者：
T.Nagata;T.Shimura;A.Ashida;N.Fujimura;T.Ito
通讯作者：
T.Ito